Datasheet > 晶体管 > 小信号双极晶体管> 2SA2018

2SA2018

更新时间： 2024-11-24 22:35:55

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
3页	82K
描述
Low frequency transistor

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2SA2018 数据手册

2SA2018 / 2SA2030 / 2SA2119K

Transistors

Low frequency transistor

2SA2018 / 2SA2030 / 2SA2119K

The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.

zExternal dimensions (Unit : mm)

zApplications

For switching, for muting.

(

)

2SA2018

(

)

(

)

0.8

1.6

zFeatures

1) A collector current is large.

2) Collector saturation voltage is low.

V^{CE (sat)}≤ 250mA

0.1Min.

Each lead has same dimensions

Abbreviated symbol : BW

(1) Emitter

(2) Base

(3) Collector

ROHM : EMT3

EIAJ : SC-75A

JEDEC : SOT-416

At I^C= 200mA / IB = 10mA

2SA2030

1.2

0.2 0.8 0.2

(

)

(3)

(

)

Each lead has same dimensions

Abbreviated symbol : BW

(1) Base

ROHM : VMT3

(2) Emitter

(3) Collector

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Symbol

V_CBO

V_CEO

I_C

Limits

Unit

2SA2119K

500

Collector current

1.6

I_CP

2.8

VMT3

150

Collector power dissipation

Junction temperature

P_C

EMT3

SMT3

0.3Min.

Each lead has same dimensions

300

150

Tstg

°C

Abbreviated symbol : BW

(1) Emitter

(2) Base

ROHM : SMT3

EIAJ : SC-59

Storage temperature

−55 to +150

(3) Collector

JEDEC : SOT-346

Single pulse, Pw=1ms

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max. Unit

Conditions

Collector-base breakdown voltage

BV_CBO

−

I_C=10µA

Collector-emitter breakdown voltage BV_CEO

I_C=1mA

I_E=10µA

Emitter-base breakdown voltage

Collector cutoff current

BV_EBO

I_CBO

−

100 nA

680

V_CB=15V

DC current transfer ratio

h_FE

270

−

V_CE=2V / I_C=10mA

Collector-emitter saturation voltage V_{CE (sat)}

100 250 mV I_C=200mA / I_B=10mA

Transition frequency

Output capacitance

f_T

−

260

6.5

−

MHz

_CE=2V, I_E=10mA, f_T=100MHz

_CB=10V, I_E=0A, f=1MHz

Cob

−

Rev.A 1/2

12 3

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