Datasheet > 2SA2018

2SA2018

更新时间： 2024-11-22 14:55:43

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	556K
描述
SOT-523

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数据手册

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2SA2018 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-523 Plastic-Encapsulate Transistors

SOT-523

2SA2018 TRANSISTOR (PNP)

1. BASE

2. EMITTER

3. COLLECTOR

FEATURES

A collector current is large.

Low V_CE(sat). V_CE(sat)≤-250mV at I_C= -200mA / I_B= -10mA

MARKING: BW

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-15

Unit

Collector- Base Voltage

Collector-Emitter Voltage

-12

Emitter-Base Voltage

-6

Collector Current -Continuous

Collector Power Dissipation

Operation Junction and Storage Temperature Range

-0.5

P_C

0.15

-55-150

℃

T_J,T_stg

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

-15

-12

-6

Typ

Max Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-10μA, I_E=0

V_(BR)CEOI_C=-1mA, I_B=0

V_(BR)EBO

I_CBO

I_E=-10μA, I_C=0

V_CB= -15 V, I_E=0

-0.1

μA

Emitter cut-off current

I_EBO

V_EB=- 6V, I_C=0

DC current gain

h_FE

V_CE=-2V, I_C=-10mA

I_C=-200mA,I_B=-10mA

V_CE=-2V,I_C=-10mA, f=100MHz

V_CB=-10V,I_E=0,f=1MHz

270

680

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

-0.25

260

6.5

MHz

Collector output capacitance

C_ob

www.jscj-elec.com

Rev. - 2.0

12 3 4

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