JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Transistors
SOT-523
2SA2018 TRANSISTOR (PNP)
1. BASE
2. EMITTER
3. COLLECTOR
FEATURES
z
A collector current is large.
z
Low VCE(sat). VCE(sat)≤-250mV at IC = -200mA / IB = -10mA
MARKING: BW
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
-15
Unit
V
Collector- Base Voltage
Collector-Emitter Voltage
-12
V
Emitter-Base Voltage
-6
V
Collector Current -Continuous
Collector Power Dissipation
Operation Junction and Storage Temperature Range
-0.5
A
PC
0.15
-55-150
W
℃
TJ,Tstg
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
-15
-12
-6
Typ
Max Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=-10μA, IE=0
V
V
V
V(BR)CEO IC=-1mA, IB=0
V(BR)EBO
ICBO
IE=-10μA, IC=0
VCB= -15 V, IE=0
-0.1
-0.1
μA
μA
Emitter cut-off current
IEBO
VEB=- 6V, IC=0
DC current gain
hFE
VCE=-2V, IC=-10mA
IC=-200mA,IB=-10mA
VCE=-2V,IC=-10mA, f=100MHz
VCB=-10V,IE=0,f=1MHz
270
680
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
-0.25
V
260
6.5
MHz
pF
Collector output capacitance
Cob
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1
Rev. - 2.0