生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.37 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 5 |
JESD-30 代码: | R-PSSO-F3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 30 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1871GA1 | NEC |
获取价格 |
TRANSISTOR | BJT | PNP | 600V V(BR)CEO | 1A I(C) | TO-243VAR | |
2SA1871-GA1 | RENESAS |
获取价格 |
1A, 600V, PNP, Si, POWER TRANSISTOR | |
2SA1871-GA1 | NEC |
获取价格 |
Power Bipolar Transistor, 1A I(C), 600V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
2SA1871-GA1-AZ | NEC |
获取价格 |
1A, 600V, PNP, Si, POWER TRANSISTOR | |
2SA1871GA1-T1-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,600V V(BR)CEO,1A I(C),TO-243VAR | |
2SA1871GA1-T2-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,600V V(BR)CEO,1A I(C),TO-243VAR | |
2SA1871GA2 | NEC |
获取价格 |
TRANSISTOR | BJT | PNP | 600V V(BR)CEO | 1A I(C) | TO-243VAR | |
2SA1871-GA2 | NEC |
获取价格 |
Power Bipolar Transistor, 1A I(C), 600V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
2SA1871-GA2-AZ | NEC |
获取价格 |
Power Bipolar Transistor, 1A I(C), 600V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
2SA1871GA2-T1-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,600V V(BR)CEO,1A I(C),TO-243VAR |