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2SA1871-AZ PDF预览

2SA1871-AZ

更新时间: 2024-11-09 13:00:31
品牌 Logo 应用领域
日电电子 - NEC 晶体开关晶体管高压
页数 文件大小 规格书
6页 117K
描述
Power Bipolar Transistor, 1A I(C), 600V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

2SA1871-AZ 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.37外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:600 V
配置:SINGLE最小直流电流增益 (hFE):5
JESD-30 代码:R-PSSO-F3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):30 MHz
Base Number Matches:1

2SA1871-AZ 数据手册

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DATA SHEET  
SILICON TRANSISTOR  
2SA1871  
PNP SILICON TRIPLE DIFFUSED TRANSISTOR  
FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING  
PACKAGE DRAWING (UNIT: mm)  
The 2SA1871 is a transistor developed for high-speed high-  
voltage switching and is ideal for use in switching elements such  
as switching regulators and DC/DC converters.  
FEATURES  
New package with dimensions in between those of small signal  
and power signal package  
High voltage  
Fast switching speed  
Complementary transistor with 2SC4942  
QUALITY GRADES  
Electrode connection  
1: Emitter  
• Standard  
Please refer to “Quality Grades on NEC Semiconductor Devices”  
(Document No. C11531E) published by NEC Corporation to  
know the specification of quality grade on the devices and its  
recommended applications.  
2: Collector  
3: Base  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC(DC)  
IC(pulse)  
PT  
Conditions  
Ratings  
600  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (pulse)  
Total power dissipation  
Junction temperature  
Storage temperature  
600  
V
7.0  
V
1.0  
A
PW 10 ms, duty cycle 50 %  
7.5 cm2 × 0.7 mm ceramic board used  
2.0  
A
2.0  
W
°C  
°C  
Tj  
150  
55 to +150  
Tstg  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D16144EJ1V0DS00 (1st edition)  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©

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Power Bipolar Transistor, 1A I(C), 600V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
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