Datasheet > 2SA1871-GA2-AZ

2SA1871-GA2-AZ

更新时间： 2024-01-26 03:11:10

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
6页	116K
描述
Power Bipolar Transistor, 1A I(C), 600V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

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2SA1871-GA2-AZ 数据手册

DATA SHEET

SILICON TRANSISTOR

2SA1871

PNP SILICON TRIPLE DIFFUSED TRANSISTOR

FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING

PACKAGE DRAWING (UNIT: mm)

The 2SA1871 is a transistor developed for high-speed high-

voltage switching and is ideal for use in switching elements such

as switching regulators and DC/DC converters.

FEATURES

•

New package with dimensions in between those of small signal

and power signal package

•

High voltage

Fast switching speed

Complementary transistor with 2SC4942

QUALITY GRADES

Electrode connection

1: Emitter

• Standard

Please refer to “Quality Grades on NEC Semiconductor Devices”

(Document No. C11531E) published by NEC Corporation to

know the specification of quality grade on the devices and its

recommended applications.

2: Collector

3: Base

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Symbol

V^CBO

V^CEO

V^EBO

I^C(DC)

I^C(pulse)

P^T

Conditions

Ratings

−600

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Total power dissipation

Junction temperature

Storage temperature

−600

−7.0

−1.0

PW ≤ 10 ms, duty cycle ≤ 50 %

7.5 cm²× 0.7 mm ceramic board used

−2.0

2.0

°C

T^j

150

−55 to +150

T^stg

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16144EJ1V0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4 5 6

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