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2SA1873_07 PDF预览

2SA1873_07

更新时间： 2024-02-29 05:49:52
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器
页数 文件大小 规格书
3页 402K
描述
Audio Frequency General Purpose Amplifier Applications

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中文翻译

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2SA1873_07 数据手册

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2SA1873  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)  
2SA1873  
Audio Frequency General Purpose Amplifier Applications  
Unit: mm  
•
•
•
•
Small package (dual type)  
High voltage and high current: V  
= −50 V, I = −150 mA (max)  
CEO  
C
High h  
FE  
Excellent h  
linearity: h  
(I = −0.1 mA)/h  
C
(I = −2 mA)  
FE C  
FE  
FE  
= 0.95 (typ.)  
Complementary to 2SC4944  
•
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
−50  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
−50  
V
−5  
V
I
−150  
−30  
mA  
mA  
C
Base current  
I
B
P
C
Collector power dissipation  
200  
mW  
(Note 1)  
Junction temperature  
T
125  
°C  
°C  
j
JEDEC  
JEITA  
―
―
Storage temperature range  
T
stg  
−55~125  
Note:  
Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
TOSHIBA  
2-2L1A  
Weight: 6.2 mg (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Total rating  
Marking  
Equivalent Circuit (top view)  
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)  
Characteristics  
Symbol  
Test Condition  
= −50 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
V
V
⎯
⎯
⎯
⎯
−0.1  
−0.1  
μA  
μA  
CBO  
CB  
EB  
E
I
= −5 V, I = 0  
C
EBO  
h
FE  
(Note)  
DC current gain  
V
= −6 V, I = −2 mA  
120  
⎯
400  
CE  
C
Collector-emitter saturation voltage  
Transition frequency  
V
I
= −100 mA, I = −10 mA  
⎯
80  
⎯
−0.1  
⎯
−0.3  
⎯
V
CE (sat)  
C
B
f
V
V
= −10 V, I = −1 mA  
MHz  
pF  
T
CE  
CB  
C
Collector output capacitance  
C
= −10 V, I = 0, f = 1 MHz  
4
7
ob  
E
Note 2:  
h classification Y (Y): 120~240, GR (G): 200~400  
FE  
(
) marking symbol  
1
2007-11-01  
123

中文翻译

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