5秒后页面跳转
捷配首页

Datasheet > 暂无类别数据> 2SA1873-GR
2SA1873-GR PDF预览

2SA1873-GR

更新时间： 2024-11-20 12:56:15
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体晶体管PC
页数 文件大小 规格书
3页 226K
描述
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

阅读下载

中文翻译

获取价格

2SA1873-GR 数据手册

 浏览型号2SA1873-GR的Datasheet PDF文件第2页浏览型号2SA1873-GR的Datasheet PDF文件第3页 
2SA1873  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)  
2SA1873  
Audio Frequency General Purpose Amplifier Applications  
Unit: mm  
•
•
•
•
Small package (dual type)  
High voltage and high current: V  
= −50 V, I = −150 mA (max)  
CEO  
C
High h  
FE  
Excellent h  
linearity: h  
(I = −0.1 mA)/h  
C
(I = −2 mA)  
FE C  
FE  
FE  
= 0.95 (typ.)  
Complementary to 2SC4944  
•
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
−50  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
−50  
V
−5  
V
I
−150  
−30  
mA  
mA  
C
Base current  
I
B
P
C
Collector power dissipation  
200  
mW  
(Note 1)  
Junction temperature  
T
j
125  
°C  
°C  
JEDEC  
JEITA  
―
―
Storage temperature range  
T
stg  
−55~125  
Note:  
Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
TOSHIBA  
2-2L1A  
Weight: 6.2 mg (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Total rating  
Marking  
Equivalent Circuit (top view)  
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)  
Characteristics  
Symbol  
Test Condition  
= −50 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
V
V
⎯
⎯
⎯
⎯
−0.1  
−0.1  
μA  
μA  
CBO  
CB  
EB  
E
I
= −5 V, I = 0  
C
EBO  
h
FE  
(Note)  
DC current gain  
V
= −6 V, I = −2 mA  
120  
⎯
400  
CE  
C
Collector-emitter saturation voltage  
Transition frequency  
V
I
= −100 mA, I = −10 mA  
⎯
80  
⎯
−0.1  
⎯
−0.3  
⎯
V
CE (sat)  
C
B
f
V
V
= −10 V, I = −1 mA  
MHz  
pF  
T
CE  
CB  
C
Collector output capacitance  
C
= −10 V, I = 0, f = 1 MHz  
4
7
ob  
E
Note 2:  
h classification Y (Y): 120~240, GR (G): 200~400  
FE  
(
) marking symbol  
1
2007-11-01  
123

中文翻译

下载PDF

与2SA1873-GR相关器件

型号 品牌 获取价格 描述 数据表
2SA1873GRTE85R TOSHIBA

获取价格

 		TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
2SA1873Y ETC

获取价格

 		TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP
2SA1873-Y(TE85L,F) TOSHIBA

获取价格

 		TRANSISTOR,BJT,ARRAY,COMM EMITTER,PNP,50V V(BR)CEO,150MA I(C),TSOP
2SA1873YTE85R TOSHIBA

获取价格

 		TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
2SA1875 SANYO

获取价格

 		High-Definition CRT Display Video Output Applications
2SA1875 KEXIN

获取价格

 		High-voltage Switching Transistor
2SA1875 TYSEMI

获取价格

 		High fT : fT=400MHz(typ). High breakdown voltage : VCEO 200V(min).
2SA1875_15 KEXIN

获取价格

 		PNP Transistors
2SA1875D ETC

获取价格

 		TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 300MA I(C) | TO-252
2SA1875-D KEXIN

获取价格

 		PNP Transistors

与2SA1873-GR相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证