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2SA1879 PDF预览

2SA1879

更新时间: 2024-11-08 22:52:39
品牌 Logo 应用领域
新电元 - SHINDENGEN 晶体开关晶体管
页数 文件大小 规格书
8页 277K
描述
Switching Power Transistor(-7A PNP)

2SA1879 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:ITO-220, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.85
Is Samacsys:N其他特性:HIGH RELIABILITY
外壳连接:ISOLATED最大集电极电流 (IC):7 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):70JESD-30 代码:R-PSFM-T3
JESD-609代码:e0湿度敏感等级:2
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):240极性/信道类型:PNP
功耗环境最大值:25 W最大功率耗散 (Abs):25 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
最大关闭时间(toff):1700 ns最大开启时间(吨):300 ns
VCEsat-Max:0.3 VBase Number Matches:1

2SA1879 数据手册

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SHINDENGEN  
Switching Power Transistor  
HSV Series  
OUTLINE DIMENSIONS  
2SA1879  
Case : ITO-220  
(TP7T8)  
Unit : mm  
-7A PNP  
RATINGS  
Absolute Maximum Ratings  
Item  
Storage Temperature  
Symbol  
Tstg  
Tj  
VCBO  
VCEO  
VEBO  
Conditions  
Ratings  
Unit  
V
V
V
-55~150  
150  
-80  
Junction Temperature  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
-80  
-7  
Collector Current DC  
I
-7  
-14  
-1.5  
A
C
Collector Current Peak  
Base Current DC  
I
A
A
CP  
I
B
Base Current Peak  
I
-2  
25  
2
A
BP  
Total Transistor Dissipation  
Dielectric Strength  
PT  
Vdis  
TOR  
Tc = 25℃  
W
Terminal to case, AC 1 minute  
(Recommended torque : 0.3Nm)  
kV  
M ounting Torque  
0.5  
Nm  
●Electrical Characteristics (Tc=25℃)  
Item  
Conditions  
Symbol  
V (sus) I = -0.1A  
Ratings  
M in -80  
Unit  
V
Collector to Emitter Sustaining Voltage  
Collector Cutoff Current  
C
CEO  
I
At rated Voltage  
M ax -0.1 mA  
M ax -0.1  
CBO  
I
CEO  
Emitter Cutoff Current  
I
At rated Voltage  
M ax -0.1 mA  
M in 70  
EBO  
DC Current Gain  
hFE  
VCE = -2V, I =-3.5A  
C
Collector to Emitter Saturation Voltage  
I = -3.5A  
C
VCE(sat)  
VBE(sat)  
θjc  
M ax -0.3  
M ax -1.2  
M ax 5  
TYP 50  
M ax 0.3  
V
V
Base to Emitter Saturation Voltage  
Thermal Resistance  
I = -0.35A  
B
Junction to case  
℃/W  
M Hz  
Transition Frequency  
Turn on Time  
f
VCE = -10V, I = -0.7A  
C
T
ton  
I = -3.5A  
C
Storage Time  
Fall Time  
I = -0.35A, I = -0.35A  
B2  
ts  
M ax 1.5  
M ax 0.2  
μs  
B1  
RL = 8Ω, VBB2 = -4V  
tf  
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd  

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