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2SA1873

更新时间: 2024-11-20 07:29:47
品牌 Logo 应用领域
金誉半导体 - HTSEMI 晶体晶体管
页数 文件大小 规格书
1页 338K
描述
DUAL TRANSISTOR (PNP+ PNP)

2SA1873 数据手册

  
2SA1873  
DUAL TRANSISTOR (PNP+PNP)  
Features  
SOT-353  
z
z
z
z
z
Small package (dual type)  
High voltage and high current  
High hFE  
Excellent hFE linearity  
Complementary to 2SC4944  
1
MARKING: SY SGR  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
Parameter  
Value  
Units  
VCBO  
VCEO  
-50  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-50  
V
VEBO  
IC  
-5  
-150  
V
mA  
mW  
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
PC  
200  
TJ  
150  
Tstg  
Storage Temperature  
-55 to150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
Min  
-50  
-50  
-5  
Typ  
Max  
Unit  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO IC=-100μA,IE=0  
V(BR)CEO IC=-1mA,IB=0  
V(BR)EBO IE=-10μA,IC=0  
V
V
V
ICBO  
IEBO  
hFE  
VCB=-50V,IE=0  
-0.1  
μA  
μA  
Emitter cut-off current  
VEB=-5V,IC=0  
-0.1  
400  
-0.3  
DC current gain  
VCE=-6V,IC=-2mA  
IC=-100mA,IB=-10mA  
VCE=-10V,IC=-1mA  
VCB=-10V,IE=0,f=1MHz  
120  
80  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat)  
fT  
V
MHz  
pF  
Collector output capacitance  
Cob  
7
CLASSIFICATION OF hFE  
Rank  
Y
GR  
Range  
120-240  
SY  
200-400  
SGR  
Marking  
1
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  

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