Datasheet > 2SA1873

2SA1873

更新时间： 2024-11-21 14:54:35

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	1112K
描述
SOT-353

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中文翻译

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技术参数
数据手册

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2SA1873 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.46
Base Number Matches：	1

2SA1873 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-353 Plastic-Encapsulate Transistors

2SA1873 ^{DUAL TRANSISTOR (PNP+PNP)}

SOT-353

Features

Small package (dual type)

High voltage and high current

High h_FE

Excellent h_FElinearity

Complementary to 2SC4944

MARKING: SY SGR

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

Parameter

Collector-Base Voltage

alue

Units

V_CBO

V_CEO

-50

Collector-Emitter Voltage

V_EBO

I_C

Emitter-Base Voltage

-5

-150

Collector Current -Continuous

Collector Power Dissipation

P_C

200

Operation Junction and Storage Temperature Range

-55 ~+150

T_J,T_STG

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

-50

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-100μA,I_E=0

V_(BR)CEOI_C=-1mA,I_B=0

V_(BR)EBOI_E=-10μA,I_C=0

I_CBO

I_EBO

h_FE

V_CB=-50V,I_E=0

-0.1

μA

Emitter cut-off current

V_EB=-5V,I_C=0

-0.1

400

-0.3

DC current gain

V_CE=-6V,I_C=-2mA

I_C=-100mA,I_B=-10mA

V_CE=-10V,I_C=-1mA

V_CB=-10V,I_E=0,f=1MHz

120

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

Rank

Range

120-240

200-400

SGR

Marking

www.jscj-elec.com

Rev. - 2.0

12 3

中文翻译

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