Datasheet > 2SA1734T1

2SA1734T1

更新时间： 2024-11-26 14:49:55

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	56K
描述
TRANSISTOR,BJT,PNP,30V V(BR)CEO,1.2A I(C),SOT-89

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技术参数
数据手册

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2SA1734T1 技术参数

生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	5.84	最大集电极电流 (IC)：	1.2 A
配置：	Single	最小直流电流增益 (hFE)：	40
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	1.56 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

2SA1734T1 数据手册

2SA1734T1

Preferred Device

PNP Silicon Transistor

The device is housed in the SOT-89 package, which is designed for

medium power surface mount applications.

• High Current: 1.2 Amp

• Available in 7 inch/1000 unit Tape and Reel

• Device Marking: SA

http://onsemi.com

MEDIUM POWER

PNP SILICON

HIGH CURRENT

TRANSISTOR

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Symbol

Value

-30

Unit

Vdc

Adc

CEO

CBO

EBO

-40

SURFACE MOUNT

-6

-1.2

Total Power Dissipation

COLLECTOR 2

@ T = 25°C

Derate above 25°C

(Note 1)

1.56

0.67

5.0

Watts

mW/°C

Watts

BASE

(Note 2)

mW/°C

Operating and Storage

Temperature Range

T , T

- 65 to 150

°C

stg

EMITTER

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

MARKING DIAGRAM

Thermal Resistance

Junction-to-Ambient

(surface mounted)

°C/W

(Note 1)

(Note 2)

190

Maximum Temperature for

Soldering Purposes

Time in Solder Bath

260

°C

Sec

SOT-89

CASE 1213

STYLE 2

= Year Code

1. FR- 4 @ 1.0 X 1.0 inch Pad 2.0 oz. Cu PCB

2. FR- 4 @ Minimum Pad

M = Month Code

SA= Device Code

ORDERING INFORMATION

Device

Package

Shipping

2SA1734T1

SOT-89

1000/Tape & Reel

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2003

Publication Order Number:

June, 2003 - Rev. 1

2SA1734T1/D

12 3 4

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