Datasheet > 2SA1416_10

2SA1416_10

更新时间： 2024-11-23 07:29:39

品牌	Logo	应用领域
三洋 - SANYO		开关高压
页数	文件大小	规格书
5页	103K
描述
High-Voltage Switching Applications

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SA1416_10 数据手册

Ordering number : EN2005B

2SA1416 / 2SC3646

SANYO Sem iconductors

DATA S HEET

PNP / NPN Epitaxial Planar Silicon Transistors

2SA1416 / 2SC3646

High-Voltage Switching Applications

Features

•

Adoption of FBET, MBIT processes.

•

High breakdown voltage and large current capacity.

•

Fast switching speed.

•

Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s.

Specifications ( ) : 2SA1416

Absolute Maximum Ratings at Ta=25°C

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Symbol

Conditions

Ratings

Unit

(--)120

(--)100

(--)6

CBO

CEO

EBO

(--)1

Collector Current (Pulse)

(--)2

500

°C

Collector Dissipation

Mounted on a ceramic board (250mm²✕0.8mm)

1.3

Junction Temperature

Storage Temperature

Marking 2SA1416 : AB

2SC3646 : CB

150

Tstg

--55 to +150

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer

equipment.

's products or

www.semiconductor-sanyo.com/network

No.2005-1/5

31010EA TK IM / O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS

12 3 4 5

中文翻译

下载PDF

与2SA1416_10相关器件

型号	品牌	获取价格	描述	数据表
2SA1416_12	SANYO	获取价格	High-Voltage Switching Applications
2SA1416_15	KEXIN	获取价格	PNP Transistors
2SA1416R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 1A I(C) \| SOT-89
2SA1416-R	KEXIN	获取价格	PNP Transistors
2SA1416S	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 1A I(C) \| SOT-89
2SA1416-S	KEXIN	获取价格	PNP Transistors
2SA1416S-TD-E	ONSEMI	获取价格	Bipolar Transistor High breakdown voltage and large current capacity
2SA1416T	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 1A I(C) \| SOT-89
2SA1416-T	KEXIN	获取价格	PNP Transistors
2SA1416T-TD-E	ONSEMI	获取价格	Bipolar Transistor High breakdown voltage and large current capacity

与2SA1416_10相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

36
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

28
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

56
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

53

产品中心

服务支持

精选活动

关于我们

帮助中心

2SA1416_10

2SA1416_10 数据手册

与2SA1416_10相关器件

与2SA1416_10相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SA1416_10

2SA1416_10 数据手册

与2SA1416_10相关器件

与2SA1416_10相关文章

您还可以找

您在本页遇到什么问题？