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2SA1416T-TD-E PDF预览

2SA1416T-TD-E

更新时间: 2024-11-20 01:07:23
品牌 Logo 应用领域
安森美 - ONSEMI 开关晶体管
页数 文件大小 规格书
7页 358K
描述
Bipolar Transistor High breakdown voltage and large current capacity

2SA1416T-TD-E 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-F3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:4 weeks风险等级:1.1
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
集电极-发射极最大电压:100 V配置:SINGLE
最小直流电流增益 (hFE):200JEDEC-95代码:TO-243AA
JESD-30 代码:R-PSSO-F3JESD-609代码:e6
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP表面贴装:YES
端子面层:Tin/Bismuth (Sn/Bi)端子形式:FLAT
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):120 MHz
Base Number Matches:1

2SA1416T-TD-E 数据手册

 浏览型号2SA1416T-TD-E的Datasheet PDF文件第2页浏览型号2SA1416T-TD-E的Datasheet PDF文件第3页浏览型号2SA1416T-TD-E的Datasheet PDF文件第4页浏览型号2SA1416T-TD-E的Datasheet PDF文件第5页浏览型号2SA1416T-TD-E的Datasheet PDF文件第6页浏览型号2SA1416T-TD-E的Datasheet PDF文件第7页 
Ordering number : EN2005C  
2SA1416/2SC3646  
Bipolar Transistor  
http://onsemi.com  
(–)  
–)  
(
), (  
sat PNP)NPN Single PCP  
100V, ( 1A, Low V  
CE  
Features  
Adoption of FBET, MBIT processes  
High breakdown voltage and large current capacity  
Fast switching speed  
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s  
( ) : 2SA1416  
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
(--)120  
(--)100  
(--)6  
Unit  
V
V
CBO  
V
V
CEO  
V
V
EBO  
I
C
(--)1  
A
Collector Current (Pulse)  
I
CP  
(--)2  
A
500  
mW  
W
Collector Dissipation  
P
C
When mounted on ceramic substrate (250mm2 0.8mm)  
1.3  
×
Junction Temperature  
Storage Temperature  
Tj  
150  
C
°
°
Tstg  
--55 to +150  
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating  
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.  
Package Dimensions  
Product & Package Information  
unit : mm (typ)  
• Package  
: PCP  
7007B-004  
• JEITA, JEDEC  
: SC-62, SOT-89, TO-243  
Minimum Packing Quantity : 1,000 pcs./reel  
Top View  
2SA1416S-TD-E  
2SA1416T-TD-E  
2SC3646S-TD-E  
2SC3646T-TD-E  
4.5  
1.6  
Packing Type: TD  
1.5  
TD  
1
2
3
Marking  
0.4  
0.5  
0.4  
1.5  
3.0  
RANK  
RANK  
2SA1416  
2SC3646  
2
0.75  
Electrical Connection  
2
1 : Base  
2 : Collector  
3 : Emitter  
1
1
Bottom View  
3
3
PCP  
2SA1416  
2SC3646  
Semiconductor Components Industries, LLC, 2013  
September, 2013  
82212 TKIM/31010EA TKIM/O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS No.2005-1/7  

2SA1416T-TD-E 替代型号

型号 品牌 替代类型 描述 数据表
2SA1416S-TD-E ONSEMI

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Bipolar Transistor High breakdown voltage and large current capacity

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