Datasheet > 2SA1417_0608

2SA1417_0608

更新时间： 2024-11-07 07:29:39

品牌	Logo	应用领域
三洋 - SANYO		开关高压
页数	文件大小	规格书
5页	58K
描述
High-Voltage Switching Applications

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2SA1417_0608 数据手册

Ordering number : EN2006C

2SA1417 / 2SC3647

SANYO Sem iconductors

DATA S HEET

PNP / NPN Epitaxial Planar Silicon Transistors

High-Voltage Switching

Applications

2SA1417 / 2SC3647

Features

• Adoption of FBET, MBIT processes.

•

High breakdown voltage and large current capacity.

• Ultrasmall size making it easy to provide high-density small-sized hybrid ICs.

Specifications ( ) : 2SA1417

Absolute Maximum Ratings at Ta=25°C

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Symbol

Conditions

Ratings

Unit

CBO

CEO

EBO

(--)120

(--)100

(--)6

(--)2

Collector Current (Pulse)

(--)3

500

°C

Collector Dissipation

Mounted on a ceramic board (250mm²✕0.8mm)

1.5

Junction Temperature

Storage Temperature

Tstg

150

--55 to +150

Electrical Characteristics at Ta=25°C

Ratings

typ

Parameter

Collector Cutoff Current

Symbol

Conditions

Unit

min

max

=(--)100V, I =0A

(--)100

400*

CBO

Emitter Cutoff Current

=(--)4V, I =0A

EBO

DC Current Gain

=(--)5V, I =(--)100mA

100*

Gain-Bandwidth Product

Output Capacitance

=(--)10V, I =(--)100mA

120

(25)16

(--0.22)0.13 (--0.6)0.4

(--)0.85 (--)1.2

MHz

Cob

=(--)10V, f=1MHz

Collector-to-Emitter Saturation Voltage

Base-to-Emitterr Saturation Voltage

(sat)

=(--)1A, I =(--)100mA

Continued on next page.

* ; The 2SA1417 / 2S3647 are classified by 100mA h as follws:

Rank

100 to 200

140 to 280

200 to 400

Marking 2SA1417: AC

2SC3647: CC

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

80906 / 22006EA MS IM / O3103TN (KT) / 71598HA (KT) / 3277KI / N255MW, TS No.2006-1/5

12 3 4 5

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与2SA1417_0608相关器件

型号	品牌	获取价格	描述	数据表
2SA1417_12	SANYO	获取价格	High-Voltage Switching Applications
2SA1417_15	KEXIN	获取价格	PNP Transistors
2SA1417R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 2A I(C) \| SOT-89
2SA1417-R	KEXIN	获取价格	PNP Transistors
2SA1417S	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 2A I(C) \| SOT-89
2SA1417-S	KEXIN	获取价格	PNP Transistors
2SA1417S-TD-E	ONSEMI	获取价格	Bipolar Transistor
2SA1417T	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 2A I(C) \| SOT-89
2SA1417-T	KEXIN	获取价格	PNP Transistors
2SA1417T-TD-E	ONSEMI	获取价格	Bipolar Transistor

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