Datasheet > 2SA1416R

2SA1416R

更新时间： 2024-11-22 23:19:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
4页	141K
描述
TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 1A I(C) \| SOT-89

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数据手册

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2SA1416R 数据手册

Ordering number:EN2005A

PNP/NPN Epitaxial Planar Silicon Transistors

2SA1416/2SC3646

High-Voltage Switching Applications

Features

Package Dimensions

unit:mm

· Adoption of FBET, MBIT processes.

· High breakdown voltage and large current capacity.

· Fast switching time.

· Very small size making it easy to provide high-

density, small-sized hybrid ICs.

2038

[2SA1416/2SC3646]

E : Emitter

C : Collector

B : Base

( ) : 2SA1416

SANYO : PCP

(Bottom view)

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Symbol

Conditions

Ratings

Unit

(–)120

(–)100

(–)6

CBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

CEO

EBO

(–)1

Collector Current (Pulse)

Collector Dissipation

(–)2

500

˚C

Moutned on ceramic board (250mm²×0.8mm)

1.3

Junction Temperature

Storage Temperature

150

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

Collector Cutoff Current

=(–)100V, I =0

=(–)4V, I =0

=(–)5V, I =(–)100mA

(–)100

400*

CBO

Emitter Cutoff Current

DC Current Gain

EBO

100*

Gain-Bandwidth Product

Output Capacitance

=(–)10V, I =(–)100mA

120

MHz

=(–)10V, f=1MHz

(13)

8.5

Collector-to-Emitter Saturation Voltage

=(–)400mA, I =(–)40mA

C B

(–0.2)

0.1

(–0.6)

0.4

CE(sat)

Base-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Votage

Turn-ON Time

=(–)400mA, I =(–)40mA

=(–)10µA, I =0

(–)0.85

(–)1.2

BE(sat)

(–)120

(–)100

(–)6

(BR)CBO

(BR)CEO

(BR)EBO

=(–)1mA, R =∞

I =(–)10µA, I =0

See specified Test Circuit.

(80)

Storage Time

Fall Time

(700)

850

(40)

stg

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71598HA (KT)/3277KI/N255MW, TS No.2005-1/4

12 3 4

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