Datasheet > 2SA1416-S

2SA1416-S

更新时间： 2024-11-20 01:07:11

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1622K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SA1416-S 数据手册

SMD Type

Transistors

PNP Transistors

2SA1416

1.70 0.1

Features

Adoption of FBET, MBIT Processes

High Breakdown Voltage and Large Current Capacity

Fast Switching Time

0.42 0.1

0.46 0.1

● Complementary to 2SC3646

1.Base

2.Collector

3.Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

-120

-100

-6

Collector Current - Continuous

Collector Current - Pulsed

Collector Power Dissipation

Junction Temperature

-1

℃

-2

500

150

Storage Temperature range

Tstg

-55 to 150

Electrical Characteristics Ta = 25

Parameter

Symbol

Test Conditions

Ic= -100 μA， I =0

Ic= -1 mA， RBE=∞

= -100μA， I =0

CB= -100 V , I =0

EB= -4V , I =0

Min

-120

-100

-6

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

-0.1

-0.6

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=-400mA, I

=- 40mA

-0.2

C=-400mA, I

-0.85 -1.2

CE= -5V, I

C= -100mA

100

400

Turn-on time

700

See Test Circuit.

Storage time

Fall time

Output capacitance

CB= -10V, I

CE= -10V, I

= 0,f=1MHz

= -100mA

Transition frequency

120

MHz

■ Classification of hfe

Type

Range

Marking

2SA1416-R

100-200

ABR*

2SA1416-S

140-280

ABS*

2SA1416-T

200-400

ABT*

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