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2SA1416T PDF预览

2SA1416T

更新时间: 2024-11-18 23:19:59
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关
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4页 141K
描述
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 1A I(C) | SOT-89

2SA1416T 数据手册

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Ordering number:EN2005A  
PNP/NPN Epitaxial Planar Silicon Transistors  
2SA1416/2SC3646  
High-Voltage Switching Applications  
Features  
Package Dimensions  
unit:mm  
· Adoption of FBET, MBIT processes.  
· High breakdown voltage and large current capacity.  
· Fast switching time.  
· Very small size making it easy to provide high-  
density, small-sized hybrid ICs.  
2038  
[2SA1416/2SC3646]  
E : Emitter  
C : Collector  
B : Base  
( ) : 2SA1416  
SANYO : PCP  
(Bottom view)  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Collector-to-Base Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
(–)120  
(–)100  
(–)6  
V
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
V
V
CEO  
V
EBO  
I
(–)1  
A
C
Collector Current (Pulse)  
Collector Dissipation  
I
(–)2  
A
CP  
P
500  
mW  
W
˚C  
˚C  
C
Moutned on ceramic board (250mm2×0.8mm)  
1.3  
Junction Temperature  
Storage Temperature  
Tj  
150  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Collector Cutoff Current  
I
V
V
V
V
V
=(–)100V, I =0  
E
=(–)4V, I =0  
C
=(–)5V, I =(–)100mA  
C
(–)100  
(–)100  
400*  
nA  
nA  
CBO  
CB  
EB  
CE  
CE  
CB  
Emitter Cutoff Current  
DC Current Gain  
I
EBO  
h
100*  
FE  
Gain-Bandwidth Product  
Output Capacitance  
f
=(–)10V, I =(–)100mA  
120  
MHz  
pF  
pF  
V
T
C
C
=(–)10V, f=1MHz  
(13)  
8.5  
ob  
Collector-to-Emitter Saturation Voltage  
V
V
I
=(–)400mA, I =(–)40mA  
C B  
(–0.2)  
0.1  
(–0.6)  
0.4  
CE(sat)  
V
Base-to-Emitter Saturation Voltage  
Collector-to-Base Breakdown Voltage  
Collector-to-Emitter Breakdown Voltage  
Emitter-to-Base Breakdown Votage  
Turn-ON Time  
I
I
I
=(–)400mA, I =(–)40mA  
B
=(–)10µA, I =0  
E
(–)0.85  
(–)1.2  
V
BE(sat)  
C
C
C
V
V
V
(–)120  
(–)100  
(–)6  
V
(BR)CBO  
(BR)CEO  
(BR)EBO  
=(–)1mA, R =  
V
BE  
I =(–)10µA, I =0  
V
E
C
t
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
(80)  
80  
ns  
ns  
ns  
ns  
ns  
ns  
on  
Storage Time  
Fall Time  
t
(700)  
850  
(40)  
50  
stg  
t
f
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
71598HA (KT)/3277KI/N255MW, TS No.2005-1/4  

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