Ordering number:EN2005A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1416/2SC3646
High-Voltage Switching Applications
Features
Package Dimensions
unit:mm
· Adoption of FBET, MBIT processes.
· High breakdown voltage and large current capacity.
· Fast switching time.
· Very small size making it easy to provide high-
density, small-sized hybrid ICs.
2038
[2SA1416/2SC3646]
E : Emitter
C : Collector
B : Base
( ) : 2SA1416
SANYO : PCP
(Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
V
(–)120
(–)100
(–)6
V
CBO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
V
V
V
CEO
V
EBO
I
(–)1
A
C
Collector Current (Pulse)
Collector Dissipation
I
(–)2
A
CP
P
500
mW
W
˚C
˚C
C
Moutned on ceramic board (250mm2×0.8mm)
1.3
Junction Temperature
Storage Temperature
Tj
150
Tstg
–55 to +150
Electrical Characteristics at Ta = 25˚C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Collector Cutoff Current
I
V
V
V
V
V
=(–)100V, I =0
E
=(–)4V, I =0
C
=(–)5V, I =(–)100mA
C
(–)100
(–)100
400*
nA
nA
CBO
CB
EB
CE
CE
CB
Emitter Cutoff Current
DC Current Gain
I
EBO
h
100*
FE
Gain-Bandwidth Product
Output Capacitance
f
=(–)10V, I =(–)100mA
120
MHz
pF
pF
V
T
C
C
=(–)10V, f=1MHz
(13)
8.5
ob
Collector-to-Emitter Saturation Voltage
V
V
I
=(–)400mA, I =(–)40mA
C B
(–0.2)
0.1
(–0.6)
0.4
CE(sat)
V
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Votage
Turn-ON Time
I
I
I
=(–)400mA, I =(–)40mA
B
=(–)10µA, I =0
E
(–)0.85
(–)1.2
V
BE(sat)
C
C
C
V
V
V
(–)120
(–)100
(–)6
V
(BR)CBO
(BR)CEO
(BR)EBO
=(–)1mA, R =∞
V
BE
I =(–)10µA, I =0
V
E
C
t
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
(80)
80
ns
ns
ns
ns
ns
ns
on
Storage Time
Fall Time
t
(700)
850
(40)
50
stg
t
f
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/3277KI/N255MW, TS No.2005-1/4