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2SA1418-HF_15 PDF预览

2SA1418-HF_15

更新时间: 2024-11-19 01:08:23
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科信 - KEXIN /
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3页 1556K
描述
PNP Transistors

2SA1418-HF_15 数据手册

 浏览型号2SA1418-HF_15的Datasheet PDF文件第2页浏览型号2SA1418-HF_15的Datasheet PDF文件第3页 
SMD Type  
Transistors  
PNP Transistors  
2SA1418-HF  
1.70 0.1  
Features  
Adoption of FBET, MBIT Processes  
High Breakdown Voltage and Large Current Capacity  
Fast Switching Speed  
0.42 0.1  
0.46 0.1  
Complementary to 2SC3648-HF  
PbFree Package May be Available. The GSuffix Denotes a  
PbFree Lead Finish  
1.Base  
2.Collector  
3.Emitter  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector - Base Voltage  
Symbol  
Rating  
Unit  
VCBO  
VCEO  
VEBO  
-180  
-160  
-6  
V
Collector - Emitter Voltage  
Emitter - Base Voltage  
Collector Current - Continuous  
Collector Current - Pulsed  
Collector Power Dissipation  
Junction Temperature  
I
C
-0.7  
A
mW  
I
CP  
-1.5  
P
C
500  
T
J
150  
Storage Temperature range  
Tstg  
-55 to 150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Test Conditions  
Ic= -100 μAI =0  
Ic= -1 mARBE=∞  
= -100μAI =0  
CB= -120 V , I =0  
EB= -4V , I =0  
Min  
-180  
-160  
-6  
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
E
I
E
C
I
CBO  
EBO  
V
V
E
-0.1  
-0.1  
-0.5  
uA  
V
I
C
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
DC current gain  
V
CE(sat)  
BE(sat)  
I
I
C
=-250mA, I  
B
B
=- 25mA  
=- 25mA  
-0.2  
V
C=-250mA, I  
-0.85 -1.2  
h
FE  
V
CE= -5V, I  
C= -100mA  
100  
400  
Turn-on time  
t
on  
60  
900  
60  
See Test Circuit.  
ns  
Storage time  
ts  
Fall time  
t
f
Output capacitance  
C
ob  
T
V
V
CB= -10V, I  
CE= -10V, I  
E
E
= 0,f=1MHz  
= -50mA  
11  
pF  
Transition frequency  
f
120  
MHz  
Classification of hfe  
Type  
Range  
Marking  
2SA1418-R-HF 2SA1418-S-HF 2SA1418-T-HF  
100-200 140-280 200-400  
ADR* ADS* ADT*  
F
F
F
1
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