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2SA1381DSTU PDF预览

2SA1381DSTU

更新时间: 2024-11-21 04:25:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管
页数 文件大小 规格书
6页 169K
描述
PNP Epitaxial Silicon Transistor

2SA1381DSTU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-126
包装说明:TO-126, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:7.93
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:300 V
配置:SINGLE最小直流电流增益 (hFE):60
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):7 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

2SA1381DSTU 数据手册

 浏览型号2SA1381DSTU的Datasheet PDF文件第2页浏览型号2SA1381DSTU的Datasheet PDF文件第3页浏览型号2SA1381DSTU的Datasheet PDF文件第4页浏览型号2SA1381DSTU的Datasheet PDF文件第5页浏览型号2SA1381DSTU的Datasheet PDF文件第6页 
March 2008  
2SA1381/KSA1381  
PNP Epitaxial Silicon Transistor  
Applications  
Audio, Voltage Amplifier and Current Source  
CRT Display, Video Output  
General Purpose Amplifier  
Features  
High Voltage : VCEO= -300V  
Low Reverse Transfer Capacitance : Cre= 2.3pF at VCB = -30V  
Excellent Gain Linearity for low THD  
High Frequency: 150MHz  
Full thermal and electrical Spice models are available  
Complement to 2SC3503/KSC3503  
TO-126  
1. Emitter 2.Collector 3.Base  
1
Absolute Maximum Ratings*  
T = 25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
-300  
Units  
V
BVCBO  
BVCEO  
BVEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current(DC)  
Collector Current(Pulse)  
-300  
V
-5  
V
-100  
mA  
mA  
ICP  
-200  
PC  
Total Device Dissipation, TC=25°C  
TC=125°C  
7
1.2  
W
W
TJ, TSTG  
Junction and Storage Temperature  
- 55 ~ +150  
°C  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Thermal Characteristics* T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Max.  
Units  
RθJC  
Thermal Resistance, Junction to Case  
17.8  
°C/W  
* Device mounted on minimum pad size  
h
Classification  
FE  
C
D
E
F
Classification  
hFE  
40 ~ 80  
60 ~ 120  
100 ~ 200  
160 ~ 320  
© 2008 Fairchild Semiconductor Corporation  
2SA1381/KSA1381 Rev. A1  
www.fairchildsemi.com  
1

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