Datasheet > 2SA1382_09

2SA1382_09

更新时间： 2022-05-13 06:18:07

品牌	Logo	应用领域
东芝 - TOSHIBA		开关放大器功率放大器
页数	文件大小	规格书
5页	176K
描述
Power Amplifier Applications High-Speed Switching Applications

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2SA1382_09 数据手册

2SA1382

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

2SA1382

Power Amplifier Applications

Unit: mm

High-Speed Switching Applications

•

High DC current gain: h

= 150 to 400 (I = −0.5 A)

FE C

Low collector saturation voltage: V

= −0.5 V (max) (I = −1 A)

CE (sat)

High-speed switching: t

= 1.0 μs (typ.)

stg

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−50

Collector-emitter voltage

Emitter-base voltage

−7

−2

Collector current

Peak

−4

Base current

−1

°C

JEDEC

JEITA

TO-92MOD

Collector power dissipation

Junction temperature

900

―

150

TOSHIBA

2-5J1A

Storage temperature range

stg

−55 to 150

°C

Weight: 0.36 g (typ.)

Note1: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2009-12-21

12 3 4 5

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