Datasheet > 2SA1384

2SA1384

更新时间： 2024-11-18 06:25:11

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管高压放大器
页数	文件大小	规格书
4页	728K
描述
High Voltage Control Applications

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中文翻译

获取价格

数据手册

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2SA1384 数据手册

SMD Type

Transistors

High Voltage Control Applications

2SA1384

Features

High Voltage: VCBO = -300V , VCEO = -300V

Low Saturation Voltage: VCE(sat) = -0.5V (max)

Small Collector Output Capacitance: Cob = 6pF

PC = 1 to 2W (mounted on ceramic substrate)

Small Flat Package

Complementary to 2SC3515

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-300

Unit

-300

-8

-100

Base Current

I^B

-20

P^C

500

Collector Power Dissipation

P^{C *}

T^j

1000

150

Jumction temperature

Storage temperature Range

Tstg

-55 to +150

* 2SA1384 mounted on ceramic substrate (250 mm²x 0.8 t)

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

Testconditons

Min

Typ

Max

-0.1

Unit

ìA

Collector Cut-off Current

VCB = -300V , IE = 0

VEB = -8V , IC = 0

Emitter Cut-off Current

I^EBO

Collector-base Breakdown Voltage

Collector-emitter Breakdown Voltage

DC Current Gain

V^(BR)CBOIC = -0.1mA , IE = 0

V^(BR)CEOIC = -1mA , IB = 0

-300

h^FE

VCE = -10V , IC = -20mA

150

-0.5

-1.0

Collector-Emitter Saturation Voltage

Base-emitter Saturation Voltage

Transition Frequency

V^CE(sat)IC = -20mA , IB = -2mA

V^BE(sat)IC = -20mA , IB = -2mA

f^T

VCE = -10V , IC = -20mA

VCB = -20V , IE = 0 , f = 1MHz

MHz

Collector Output Capacitance

C^ob

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中文翻译

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