生命周期: | Transferred | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.28 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 300 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 100 | JEDEC-95代码: | TO-126 |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 150 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SA1381ESTU | FAIRCHILD | PNP Epitaxial Silicon Transistor |
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2SA1381E-YA | ONSEMI | Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plast |
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2SA1381F | ETC | TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 100MA I(C) | TO-126 |
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2SA1381F-CD | ONSEMI | Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plast |
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2SA1381F-LS | ONSEMI | Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plast |
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2SA1381F-LT | ONSEMI | Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plast |
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