Datasheet > 2SA1360_10

2SA1360_10

更新时间： 2024-11-22 07:29:39

品牌	Logo	应用领域
东芝 - TOSHIBA		音频放大器
页数	文件大小	规格书
5页	131K
描述
Audio Frequency Amplifier Applications

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数据手册

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2SA1360_10 数据手册

2SA1360

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

2SA1360

Audio Frequency Amplifier Applications

Unit: mm

•

Complementary to 2SC3423

Small collector output capacitance: C = 2.5 pF (typ.)

High transition frequency: f = 200 MHz (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−150

−5

Collector-emitter voltage

Emitter-base voltage

Collector current

−50

Base current

−5

Ta = 25°C

Tc = 25°C

1.2

Collector power

dissipation

JEDEC

JEITA

―

Junction temperature

150

°C

Storage temperature range

stg

−55 to 150

TOSHIBA

2-8H1A

Note1: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 0.82 g (typ.)

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2010-03-10

12 3 4 5

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