2SA1360O

更新时间： 2024-11-22 12:56:15

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管功率双极晶体管 PC
页数	文件大小	规格书
5页	132K
描述
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

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中文翻译

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技术参数
数据手册

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2SA1360O 技术参数

生命周期：	Obsolete	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.75
Is Samacsys：	N	最大集电极电流 (IC)：	0.05 A
集电极-发射极最大电压：	150 V	配置：	SINGLE
最小直流电流增益 (hFE)：	80	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	PNP
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	200 MHz
Base Number Matches：	1

2SA1360O 数据手册

2SA1360

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

2SA1360

Audio Frequency Amplifier Applications

Unit: mm

•

Complementary to 2SC3423

Small collector output capacitance: C = 2.5 pF (typ.)

High transition frequency: f = 200 MHz (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−150

−5

Collector-emitter voltage

Emitter-base voltage

Collector current

−50

Base current

−5

Ta = 25°C

Tc = 25°C

1.2

Collector power

dissipation

JEDEC

JEITA

―

Junction temperature

150

°C

Storage temperature range

stg

−55 to 150

TOSHIBA

2-8H1A

Note1: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 0.82 g (typ.)

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2010-03-10

12 3 4 5

中文翻译

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