Datasheet > 2SA1362-Y(T5LKENWF

2SA1362-Y(T5LKENWF

更新时间： 2025-07-30 14:46:19

品牌	Logo	应用领域
东芝 - TOSHIBA		开关光电二极管晶体管
页数	文件大小	规格书
4页	186K
描述
Small Signal Bipolar Transistor, 0.8A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon

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2SA1362-Y(T5LKENWF 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：	unknown	风险等级：	5.72
最大集电极电流 (IC)：	0.8 A	集电极-发射极最大电压：	15 V
配置：	SINGLE	最小直流电流增益 (hFE)：	120
JESD-30 代码：	R-PDSO-G3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	PNP	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	120 MHz	Base Number Matches：	1

2SA1362-Y(T5LKENWF 数据手册

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2SA1362

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1362

Low Frequency Power Amplifier Applications

Unit: mm

Power Switching Applications

•

High DC current gain: h

= 120 to 400

Low saturation voltage: V

= −0.2 V (max)

CE (sat)

(I = −400 mA, I = −8 mA)

Suitable for driver stage of small motor

Small package

•

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−15

Collector-emitter voltage

Emitter-base voltage

Collector current

−5

−800

−160

200

°C

Base current

JEDEC

JEITA

TO-236MOD

Collector power dissipation

Junction temperature

Storage temperature range

SC-59

150

TOSHIBA

2-3F1A

stg

−55 to 150

Weight: 0.012 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

Start of commercial production

1983-01

2014-03-01

12 3 4

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2SA1362YTE85L	TOSHIBA	获取价格	TRANSISTOR 800 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
2SA1362YTE85R	TOSHIBA	获取价格	TRANSISTOR 800 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
2SA1362_07	TOSHIBA	获取价格	Low Frequency Power Amplifier Applications Power Switching Applications

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