Datasheet > 2SA1362_07

2SA1362_07

更新时间： 2024-11-22 04:25:47

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
4页	307K
描述
Low Frequency Power Amplifier Applications Power Switching Applications

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中文翻译

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数据手册

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2SA1362_07 数据手册

2SA1362

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1362

Low Frequency Power Amplifier Applications

Unit: mm

Power Switching Applications

•

High DC current gain: h

= 120~400

Low saturation voltage: V

= −0.2 V (max)

CE (sat)

(I = −400 mA, I = −8 mA)

Suitable for driver stage of small motor

Small package

•

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−15

Collector-emitter voltage

Emitter-base voltage

Collector current

−5

−800

−160

200

°C

Base current

JEDEC

JEITA

TO-236MOD

Collector power dissipation

Junction temperature

Storage temperature range

SC-59

150

stg

−55~150

TOSHIBA

2-3F1A

Weight: 0.012 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

2007-11-01

12 3 4

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