Datasheet > 2SA1362

2SA1362

更新时间： 2024-11-22 06:16:47

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关光电二极管
页数	文件大小	规格书
1页	36K
描述
Silicon PNP Epitaxia

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中文翻译

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数据手册

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2SA1362 数据手册

SMD Type

TransistIoCrs

Silicon PNP Epitaxia

2SA1362

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Suitable for driver stage of small motor.

Small package.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-15

Unit

-15

-5

-800

Base current

I^B

-160

Collector dissipation

Junction temperature

Storage temperature

P^C

200

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

I^EBO

Testconditons

Min

Typ

Max

-100

Unit

Collector cut-off current

Emitter cut-off current

VCB = -15 V, IE = 0

VEB = -5 V, IC = 0

Collector-emitter breakdown voltage

DC current gain

V^(BR)CEOIC = -10 mA, IB = 0

-15

h^FE

V^]

VCE = -1 V, IC = -100 mA

IC = -400 mA, IB = -8 mA

VCE = -1 V, IC = -10 mA

VCE = -5 V, IC = -10 mA

120

400

-0.2

-0.8

Collector-emitter saturation voltage

Base-emitter voltage

V^BE

f^T

-0.5

Transition frequency

120

MHz

Collector output capacitance

C^ob

VCB = -10 V, IE = 0, f = 1 MHz

hFE Classification

Marking

Rank

hFE

120-240

200 400

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