Datasheet > 2SA1360-126

2SA1360-126

更新时间： 2024-11-23 01:19:11

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	114K
描述
Silicon PNP Power Transistors

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中文翻译

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数据手册

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2SA1360-126 数据手册

Product Specification

www.jmnic.com

Silicon PNP Power Transistors

2SA1360

DESCRIPTION

·With TO-126 package

·Complement to type 2SC3423

·High transition frequency

APPLICATIONS

·Audio frequency amplifier applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

CONDITIONS

Open emitter

VALUE

UNIT

-150

Collector-emitter voltage

Emitter-base voltage

Collector current

Open base

-150

Open collector

-5

-50

I_B

Base current

-5

1.2

T_a=25℃

T_C=25℃

P_D

Total power dissipation

T_j

Junction temperature

Storage temperature

150

℃

T_stg

-55～+150

JMnic

12 3

中文翻译

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2SA1360-126_15	JMNIC	获取价格	Silicon PNP Power Transistors
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2SA1360-Y	TOSHIBA	获取价格	TRANSISTOR 0.05 A, 150 V, PNP, Si, POWER TRANSISTOR, 2-8H1A, 3 PIN, BIP General Purpose Po
2SA1360-Y(Q)	TOSHIBA	获取价格	2SA1360-Y(Q)
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2SA1362	TOSHIBA	获取价格	TRANSISTOR (LOW FREQUENCY POWER AMPLIFIER, SWITCHING APPLICATIONS)
2SA1362	KEXIN	获取价格	Silicon PNP Epitaxia
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