是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code: | unknown |
风险等级: | 1.58 | 最大集电极电流 (IC): | 0.5 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 70 | JEDEC-95代码: | TO-236 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
功耗环境最大值: | 0.2 W | 最大功率耗散 (Abs): | 0.2 W |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 200 MHz | VCEsat-Max: | 0.25 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1313OTE85L | TOSHIBA |
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TRANSISTOR 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma | |
2SA1313OTE85R | TOSHIBA |
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TRANSISTOR 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma | |
2SA1313TE85L | TOSHIBA |
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TRANSISTOR 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma | |
2SA1313TE85R | TOSHIBA |
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TRANSISTOR 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma | |
2SA1313Y | ETC |
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TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 500MA I(C) | SOT-23 | |
2SA1313-Y | TOSHIBA |
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Audio Frequency Low Power Amplifier Applications | |
2SA1313-Y(T5LCK,F) | TOSHIBA |
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Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
2SA1313-Y(T5LKEHIF | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
2SA1313-Y(T5LMATHF | TOSHIBA |
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Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
2SA1313-Y(T5LNSEIF | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon |