5秒后页面跳转
2SA1313-Y(TE85L,F) PDF预览

2SA1313-Y(TE85L,F)

更新时间: 2024-11-29 20:50:11
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
4页 187K
描述
TRANSISTOR PNP 50V 500MA 2-3F1A

2SA1313-Y(TE85L,F) 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:unknown
风险等级:2.11最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):120JEDEC-95代码:TO-236
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
功耗环境最大值:0.2 W最大功率耗散 (Abs):0.2 W
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzVCEsat-Max:0.25 V
Base Number Matches:1

2SA1313-Y(TE85L,F) 数据手册

 浏览型号2SA1313-Y(TE85L,F)的Datasheet PDF文件第2页浏览型号2SA1313-Y(TE85L,F)的Datasheet PDF文件第3页浏览型号2SA1313-Y(TE85L,F)的Datasheet PDF文件第4页 
2SA1313  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)  
2SA1313  
Audio Frequency Low Power Amplifier Applications  
Unit: mm  
Driver Stage Amplifier Applications  
Switching Applications  
Excellent h  
linearity: h  
= 25 (min)  
FE (2)  
FE  
at V  
= 6 V, I = 400 mA  
C
CE  
High voltage: V  
= 50 V (min)  
CEO  
Complementary to 2SC3325  
Small package  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
5  
V
JEDEC  
JEITA  
TO-236MOD  
I
500  
50  
mA  
mA  
mW  
°C  
°C  
C
SC-59  
Base current  
I
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
200  
TOSHIBA  
2-3F1A  
C
T
j
150  
Weight: 0.012 g (typ.)  
T
stg  
55~150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Marking  
1
2007-11-01  

与2SA1313-Y(TE85L,F)相关器件

型号 品牌 获取价格 描述 数据表
2SA1313-Y(TE85R,F TOSHIBA

获取价格

Small Signal Bipolar Transistor
2SA1313-Y,LF(T TOSHIBA

获取价格

Small Signal Bipolar Transistor
2SA1313YTE85L TOSHIBA

获取价格

TRANSISTOR 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
2SA1313-YTE85LF TOSHIBA

获取价格

Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switc
2SA1314 TOSHIBA

获取价格

TRANSISTOR (STROBE FLASH, AUDIO POWER APPLICATIONS)
2SA1314 KEXIN

获取价格

Audio Power Applications
2SA1314 TYSEMI

获取价格

Low Saturation Voltage VCE(sat) = -0.5V (max) (IC = -2A, IB = -50mA) Small Flat Package
2SA1314_07 TOSHIBA

获取价格

Strobe Flash Applications Audio Power Applications
2SA1314_15 KEXIN

获取价格

PNP Transistors
2SA1314A ETC

获取价格

TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 2A I(C) | SOT-89