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2SA1313-Y(TE85L,F) PDF预览

2SA1313-Y(TE85L,F)

更新时间: 2024-11-10 20:50:11
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
4页 187K
描述
TRANSISTOR PNP 50V 500MA 2-3F1A

2SA1313-Y(TE85L,F) 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:unknown
风险等级:2.11最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):120JEDEC-95代码:TO-236
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
功耗环境最大值:0.2 W最大功率耗散 (Abs):0.2 W
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzVCEsat-Max:0.25 V
Base Number Matches:1

2SA1313-Y(TE85L,F) 数据手册

 浏览型号2SA1313-Y(TE85L,F)的Datasheet PDF文件第2页浏览型号2SA1313-Y(TE85L,F)的Datasheet PDF文件第3页浏览型号2SA1313-Y(TE85L,F)的Datasheet PDF文件第4页 
2SA1313  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)  
2SA1313  
Audio Frequency Low Power Amplifier Applications  
Unit: mm  
Driver Stage Amplifier Applications  
Switching Applications  
Excellent h  
linearity: h  
= 25 (min)  
FE (2)  
FE  
at V  
= 6 V, I = 400 mA  
C
CE  
High voltage: V  
= 50 V (min)  
CEO  
Complementary to 2SC3325  
Small package  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
5  
V
JEDEC  
JEITA  
TO-236MOD  
I
500  
50  
mA  
mA  
mW  
°C  
°C  
C
SC-59  
Base current  
I
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
200  
TOSHIBA  
2-3F1A  
C
T
j
150  
Weight: 0.012 g (typ.)  
T
stg  
55~150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Marking  
1
2007-11-01  

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