Datasheet > 2SA1314-A

2SA1314-A

更新时间： 2024-09-20 02:55:39

品牌	Logo	应用领域
科信 - KEXIN		放大器晶体管
页数	文件大小	规格书
2页	1225K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SA1314-A 数据手册

SMD Type

Transistors

PNP Transistors

2SA1314

Features

1.70 0.1

Low Saturation Voltage

: V^CE(sat)= -0.5V (max) (IC = -2A, IB = -50mA)

Small Flat Package

0.42 0.1

0.46 0.1

Complementary to 2SC2982

1.Base

2.Collector

3.Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

-20

-10

-6

Collector Current - Continuous

Collector Current - Pulsed *1

Base Current

-2

-4

-2

Collector Power Dissipation

Junction Temperature

500

150

℃

Storage Temperature range

Tstg

-55 to 150

*1 Pulse test: pulse width = 10ms (max), duty cycle = 30% (max)

Electrical Characteristics Ta = 25

Parameter

Symbol

Test Conditions

Ic= -1mA， I =0

Ic= -10 mA， I =0

= -1mA， I =0

CB= -20 V , I =0

EB= -6V , I =0

Min

-20

-10

-6

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

-100

-0.5

-1.2

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

=-2A, I

=- 50mA

-0.2

C=-2A, I

CE= -1V , I

=-2A

-0.83 -1.5

FE(1)

FE(2)

CE= -1V, I

= -0.5A

140

600

120

DC current gain

C= -4A

Collector output capacitance

Transition frequency

CB= -10V, I

=0,f=1MHz

CE= -1V, I = -0.5A

140

MHz

■ Classification of hfe(1)

Type

Range

Marking

2SA1314-A

140-280

2SA1314-B

200-400

2SA1314-C

300-600

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