2SA1309A

更新时间： 2024-11-08 04:25:47

品牌	Logo	应用领域
TRSYS		晶体晶体管 ISM频段放大器
页数	文件大小	规格书
2页	91K
描述
Plastic-Encapsulated Transistors

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中文翻译

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数据手册

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2SA1309A 数据手册

Transys

Electronics

TO-92S Plastic-Encapsulated Transistors

2SA1309A TRANSISTOR (PNP)

TO-92S

FEATURES

Power dissipation

1. EMITTER

P_CM

: 0.3

W (Tamb=25℃)

2. COLLECTOR

3. BASE

Collector current

I_CM

: -0.1

Collector-base voltage

V_(BR)CBO: -60

Operating and storage junction temperature range

123

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=-10µA, I_E=0

Ic=-2mA, I_B=0

MIN

-60

-50

-7

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=-10µA, I_C=0

µA

V_CB=-10V, I_E=0

-0.1

-1

I_EBO

Emitter cut-off current

V_EB=-10V, I_C=0

h_FE(1)

DC current gain

_CE=-10V, I_C=-2mA

160

460

-0.3

V_CE(sat)

Collector-emitter saturation voltage

Transition frequency

I_C=-50mA, I_B=-5mA

MHz

f_T

V_CE=-10V, I_C=-1mA, f=200MHz

C_ob

Collector output capacitance

V_CB=-10V, I_E=0, f=1MHz

3.5

CLASSIFICATION OF h_FE(1)

Rank

Range

160-260

210-340

290-460

Marking

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