生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | 风险等级: | 5.72 |
其他特性: | LOW NOISE | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 120 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 200 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SA1312-GR(TE85L,F | TOSHIBA | Trans GP BJT PNP 120V 0.1A 3-Pin S-Mini T/R |
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2SA1312-GR(TE85L,F) | TOSHIBA | TRANSISTOR,BJT,PNP,120V V(BR)CEO,100MA I(C),SOT-23 |
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2SA1312GRTE85R | TOSHIBA | TRANSISTOR 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sm |
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2SA1312TE85R | TOSHIBA | TRANSISTOR 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sm |
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2SA1313 | KEXIN | Silicon PNP Epitaxial |
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2SA1313 | TYSEMI | High voltage: VCEO = -50 V (min) Small package |
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