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2SA1313

更新时间: 2024-02-03 01:02:10
品牌 Logo 应用领域
TYSEMI /
页数 文件大小 规格书
1页 59K
描述
High voltage: VCEO = -50 V (min) Small package

2SA1313 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknown风险等级:5.7
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):120
JEDEC-95代码:TO-236JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP功耗环境最大值:0.2 W
最大功率耗散 (Abs):0.2 W表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzVCEsat-Max:0.25 V
Base Number Matches:1

2SA1313 数据手册

  
Product specification  
2SA1313  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
3
Features  
High voltage: VCEO = -50 V (min)  
Small package  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
+0.1  
-0.1  
1.9  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
-50  
Unit  
V
-50  
V
-5  
V
-500  
-50  
mA  
mA  
mW  
Base current  
IB  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
200  
Tj  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
ICBO  
Testconditons  
Min  
70  
Typ  
Max  
-0.1  
-0.1  
240  
Unit  
ìA  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
VCB = -50 V, IE = 0  
VEB = -5 V, IC = 0  
IEBO  
ìA  
hFE  
VCE = -1 V, IC = -100 mA  
Collector-emitter saturation voltage  
Base-emitter voltage  
VCE (sat) IC = -100 mA, IB = -10 mA  
-0.1 -0.25  
V
V
VBE  
fT  
VCE = -1 V, IC = -100 mA  
VCE = -6 V, IC = -20 mA  
VCB = -6 V, IE = 0, f = 1 MHz  
-0.8  
200  
13  
-1  
Transition frequency  
MHz  
pF  
Collector output capacitance  
Cob  
hFE Classification  
AC  
Marking  
Rank  
O
Y
hFE  
70 140  
120 240  
http://www.twtysemi.com  
sales@twtysemi.com  
1 of 1  
4008-318-123  

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