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2SA1312-BL PDF预览

2SA1312-BL

更新时间: 2024-01-02 09:25:01
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体放大器小信号双极晶体管光电二极管
页数 文件大小 规格书
5页 314K
描述
Audio Frequency Low Noise Amplifier Applications

2SA1312-BL 技术参数

生命周期:Active零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:1.17
其他特性:LOW NOISE最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:120 V配置:SINGLE
最小直流电流增益 (hFE):200JEDEC-95代码:TO-236
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzVCEsat-Max:0.3 V
Base Number Matches:1

2SA1312-BL 数据手册

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2SA1312  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)  
2SA1312  
Audio Frequency Low Noise Amplifier Applications  
Unit: mm  
High voltage: V  
= 120 V  
CEO  
Excellent h  
linearity: h  
(I = 0.1 mA)/ h  
(I = 2 mA)  
FE C  
FE  
FE  
C
h= 0.95 (typ.)  
= 200~700  
High h  
h
FE: FE  
Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz  
Complementary to 2SC3324  
Small package  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
120  
120  
5  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
I
100  
20  
mA  
mA  
mW  
°C  
°C  
C
JEDEC  
JEITA  
TO-236MOD  
Base current  
I
B
SC-59  
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
150  
C
TOSHIBA  
2-3F1A  
T
j
125  
Weight: 0.012 g (typ.)  
T
stg  
55~125  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to  
decrease in the reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Marking  
1
2007-11-01  

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