Datasheet > 2SA1312_07

2SA1312_07

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器
页数	文件大小	规格书
5页	622K
描述
Audio Frequency Low Noise Amplifier Applications

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数据手册

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2SA1312_07 数据手册

2SA1312

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1312

Audio Frequency Low Noise Amplifier Applications

Unit: mm

•

High voltage: V

= −120 V

CEO

Excellent h

linearity: h

(I = −0.1 mA)/ h

(I = −2 mA)

FE C

h= 0.95 (typ.)

= 200~700

•

High h

FE: FE

Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz

Complementary to 2SC3324

Small package

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−120

−5

Collector-emitter voltage

Emitter-base voltage

Collector current

−100

−20

°C

Base current

JEDEC

JEITA

TO-236MOD

Collector power dissipation

Junction temperature

Storage temperature range

150

SC-59

125

TOSHIBA

2-3F1A

stg

−55~125

Weight: 0.012 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

2007-11-01

12 3 4 5

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