Datasheet > 2SA1298-Y(T5LPAS,F

2SA1298-Y(T5LPAS,F

更新时间： 2024-11-01 20:04:47

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东芝 - TOSHIBA		/
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2SA1298-Y(T5LPAS,F 数据手册

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2SA1298

TOSHIBA Transistor Silicon PNP Epitaxial (PCT process)

2SA1298

Low Frequency Power Amplifier Application

Unit: mm

Power Switching Applications

•

High DC current gain: h

= 100 to 320

Low saturation voltage: V

= −0.4 V (max)

CE (sat)

(I = −500 mA, I = −20 mA)

Suitable for driver stage of small motor

Complementary to 2SC3265

Small package

•

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−30

−25

Collector-emitter voltage

Emitter-base voltage

Collector current

−5

−800

−160

200

°C

JEDEC

JEITA

TO-236MOD

Base current

SC-59

Collector power dissipation

Junction temperature

Storage temperature range

TOSHIBA

2-3F1A

150

Weight: 0.012 g (typ.)

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

Start of commercial production

1982-10

2014-03-01

12 3 4

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