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2SA1300 PDF预览

2SA1300

更新时间: 2023-12-06 20:10:09
品牌 Logo 应用领域
鲁光 - LGE 双极型晶体管
页数 文件大小 规格书
2页 589K
描述
双极型晶体管

2SA1300 数据手册

 浏览型号2SA1300的Datasheet PDF文件第2页 
2SA1300(PNP)  
TO-92 Bipolar Transistors  
TO-92  
1. EMITTER  
COLLECTOR  
2.  
3. BASE  
Features  
High DC Current gain and excellent hFE linearity  
Low saturation voltage  
MAXIMUM RATINGS (TA=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Value  
Units  
V
-20  
-10  
V
-6  
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
-2  
A
Dimensions in inches and (millimeters)  
PC  
0.75  
W
Tj  
150  
Storage Temperature  
-55 to +150  
Tstg  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
Test conditions  
MIN  
TYP  
MAX  
UNIT  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
IC=-1mA , IE=0  
-20  
-10  
-6  
V
V
IC=-10mA , IB=0  
IE=-1mA, IC=0  
V
VCB=-20 V , IE=0  
-0.1  
-0.1  
600  
µA  
µA  
Emitter cut-off current  
IEBO  
VEB=-6 V ,  
IC=0  
hFE  
DC current gain  
VCE=-1V, IC=-0.5A  
IC=-2A, IB= -100mA  
IC= -2A, VCE=-1V  
140  
Collector-emitter saturation voltage  
Base-emitter voltage  
VCE(sat)  
VBE  
-0.82  
-1.5  
V
V
V
CE=-1V, IC= -0.5A  
140  
50  
Transition frequency  
f T  
MHz  
pF  
f = 30MHz  
VCB=-10V,IE=0  
f=1MHZ  
Collector Output Capacitance  
Cob  
CLASSIFICATION OF hFE  
Rank  
Y
GR  
BL  
Range  
140-280  
200-400  
300-600  
http://www.lgesemi.com  
Revision:20170701-P1  
mail:lge@lgesemi.com  

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