2SA1300(PNP)
TO-92 Bipolar Transistors
TO-92
1. EMITTER
COLLECTOR
2.
3. BASE
Features
ꢀ
High DC Current gain and excellent hFE linearity
Low saturation voltage
ꢀ
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Value
Units
V
-20
-10
V
-6
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
-2
A
Dimensions in inches and (millimeters)
PC
0.75
W
℃
℃
Tj
150
Storage Temperature
-55 to +150
Tstg
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IC=-1mA , IE=0
-20
-10
-6
V
V
IC=-10mA , IB=0
IE=-1mA, IC=0
V
VCB=-20 V , IE=0
-0.1
-0.1
600
µA
µA
Emitter cut-off current
IEBO
VEB=-6 V ,
IC=0
hFE
DC current gain
VCE=-1V, IC=-0.5A
IC=-2A, IB= -100mA
IC= -2A, VCE=-1V
140
Collector-emitter saturation voltage
Base-emitter voltage
VCE(sat)
VBE
-0.82
-1.5
V
V
V
CE=-1V, IC= -0.5A
140
50
Transition frequency
f T
MHz
pF
f = 30MHz
VCB=-10V,IE=0
f=1MHZ
Collector Output Capacitance
Cob
CLASSIFICATION OF hFE
Rank
Y
GR
BL
Range
140-280
200-400
300-600
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