Datasheet > 2SA1298-Y(T5LHMD,F

2SA1298-Y(T5LHMD,F

更新时间： 2024-11-02 05:59:39

品牌	Logo	应用领域
东芝 - TOSHIBA		开关光电二极管晶体管
页数	文件大小	规格书
4页	189K
描述
Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SA1298-Y(T5LHMD,F 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：	unknown	风险等级：	5.82
最大集电极电流 (IC)：	0.8 A	集电极-发射极最大电压：	25 V
配置：	SINGLE	最小直流电流增益 (hFE)：	160
JESD-30 代码：	R-PDSO-G3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	PNP	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	120 MHz

2SA1298-Y(T5LHMD,F 数据手册

浏览型号2SA1298-Y(T5LHMD,F的Datasheet PDF文件第2页

2SA1298

TOSHIBA Transistor Silicon PNP Epitaxial (PCT process)

2SA1298

Low Frequency Power Amplifier Application

Unit: mm

Power Switching Applications

•

High DC current gain: h

= 100 to 320

Low saturation voltage: V

= −0.4 V (max)

CE (sat)

(I = −500 mA, I = −20 mA)

Suitable for driver stage of small motor

Complementary to 2SC3265

Small package

•

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−30

−25

Collector-emitter voltage

Emitter-base voltage

Collector current

−5

−800

−160

200

°C

JEDEC

JEITA

TO-236MOD

Base current

SC-59

Collector power dissipation

Junction temperature

Storage temperature range

TOSHIBA

2-3F1A

150

Weight: 0.012 g (typ.)

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

Start of commercial production

1982-10

2014-03-01

12 3 4

中文翻译

下载PDF

与2SA1298-Y(T5LHMD,F相关器件

型号	品牌	获取价格	描述	数据表
2SA1298-Y(T5LKEHIF	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon
2SA1298-Y(T5LMAA,F	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon
2SA1298-Y(T5LPAS,F	TOSHIBA	获取价格	暂无描述
2SA1298-Y(TE85L)	TOSHIBA	获取价格	2SA1298-Y(TE85L)
2SA1298-Y(TE85L,F)	TOSHIBA	获取价格	TRANSISTOR 800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MO
2SA1298-Y,LF	TOSHIBA	获取价格	TRANS PNP 25V 0.8A S-MINI
2SA1298YTE85L	TOSHIBA	获取价格	TRANSISTOR 800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
2SA1298YTE85R	TOSHIBA	获取价格	TRANSISTOR 800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
2SA1298-Y-TP	MCC	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
2SA1298-Y-TP-HF	MCC	获取价格	Small Signal Bipolar Transistor,

与2SA1298-Y(T5LHMD,F相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

22
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

23
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

46
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

54

产品中心

服务支持

精选活动

关于我们

帮助中心

2SA1298-Y(T5LHMD,F

2SA1298-Y(T5LHMD,F 技术参数

2SA1298-Y(T5LHMD,F 数据手册

与2SA1298-Y(T5LHMD,F相关器件

与2SA1298-Y(T5LHMD,F相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SA1298-Y(T5LHMD,F

2SA1298-Y(T5LHMD,F 技术参数

2SA1298-Y(T5LHMD,F 数据手册

与2SA1298-Y(T5LHMD,F相关器件

与2SA1298-Y(T5LHMD,F相关文章

您还可以找

您在本页遇到什么问题？