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2SA1241O(Q)

更新时间: 2024-01-22 07:44:39
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
5页 182K
描述
TRANSISTOR,BJT,PNP,50V V(BR)CEO,2A I(C),TO-252AA

2SA1241O(Q) 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.84最大集电极电流 (IC):2 A
配置:Single最小直流电流增益 (hFE):70
最高工作温度:150 °C极性/信道类型:PNP
最大功率耗散 (Abs):10 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

2SA1241O(Q) 数据手册

 浏览型号2SA1241O(Q)的Datasheet PDF文件第1页浏览型号2SA1241O(Q)的Datasheet PDF文件第2页浏览型号2SA1241O(Q)的Datasheet PDF文件第4页浏览型号2SA1241O(Q)的Datasheet PDF文件第5页 
2SA1241  
V
– I  
V
– I  
CE C  
CE  
C
1.0  
0.8  
0.6  
0.4  
0.2  
0
1.0  
0.8  
0.6  
0.4  
0.2  
0
Common emitter  
Tc = 25°C  
Common emitter  
Tc = 100°C  
20 30 40 60  
I
= 5 mA  
B
80  
10  
20 40 80  
I = 5 mA  
B
120  
120  
160  
180  
200  
160  
200  
0
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
2.8  
3  
0
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
Collector current  
I
C
(A)  
Collector current  
I
C
(A)  
V
– I  
h
– I  
FE C  
CE  
C
1.0  
0.8  
0.6  
0.4  
0.2  
0
1000  
Common emitter  
Common emitter  
500  
300  
V
= 2 V  
CE  
40 60  
Tc = 55°C  
I
= 10 mA  
B
Tc = 100°C  
20  
30  
80  
120  
25  
100  
160  
200  
50  
30  
55  
10  
0.0050.01  
0.03  
0.1  
0.3  
1  
3  
Collector current  
I
C
(A)  
0
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
Collector current  
I
C
(A)  
V
– I  
V
– I  
BE (sat) C  
CE (sat)  
C
1  
10  
Common emitter  
/I = 20  
Common emitter  
I /I = 20  
C B  
0.5  
0.3  
5  
3  
I
C B  
Tc = 55°C  
Tc = 100°C  
0.1  
1  
0.05  
0.03  
0.5  
0.3  
25  
55  
100  
25  
0.01  
0.0050.01  
0.1  
0.0050.01  
0.03  
0.1  
0.3  
1  
0.03  
0.1  
0.3  
1  
3  
Collector current  
I
C
(A)  
Collector current  
I
C
(A)  
3
2010-08-24  

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