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2SA1242O PDF预览

2SA1242O

更新时间: 2024-11-25 21:18:59
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
4页 146K
描述
TRANSISTOR 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, 2-7J1A, 3 PIN, BIP General Purpose Small Signal

2SA1242O 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.72Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):5 A
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):100JESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):170 MHzBase Number Matches:1

2SA1242O 数据手册

 浏览型号2SA1242O的Datasheet PDF文件第2页浏览型号2SA1242O的Datasheet PDF文件第3页浏览型号2SA1242O的Datasheet PDF文件第4页 
2SA1242  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)  
2SA1242  
Strobe Flash Applications  
Unit: mm  
Medium Power Amplifier Applications  
Excellent h  
linearity  
FE  
: h  
= 100 to 320 (V  
= 2 V, I = 0.5 A)  
C
FE (1)  
FE (2)  
CE  
: h  
= 70 (min) (V  
CE  
= 2 V, I = 4 A)  
C
Low collector saturation voltage  
: V = 1.0 V (max) (I = 4 A, I = 0.1 A)  
CE (sat)  
High power dissipation  
C
B
: P = 10 W (Tc = 25°C), P = 1.0 W (Ta = 25°C)  
C
C
Maximum Ratings  
(Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
V
CBO  
V
CEO  
V
EBO  
35  
20  
8  
V
V
V
DC  
I
5  
JEDEC  
JEITA  
C
Collector current  
Base current  
A
Pulsed  
I
8  
CP  
(Note 1)  
TOSHIBA  
2-7B1A  
I
0.5  
1.0  
A
B
Weight: 0.36 g (typ.)  
Ta = 25°C  
Tc = 25°C  
Collector power  
dissipation  
P
W
C
10  
Junction temperature  
T
150  
°C  
°C  
j
Storage temperature range  
T
stg  
55 to 150  
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)  
JEDEC  
JEITA  
TOSHIBA  
2-7J1A  
Weight: 0.36 g (typ.)  
1
2004-07-07  

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