Datasheet > 2SA1242_10

2SA1242_10

更新时间： 2024-11-25 07:29:35

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器功率放大器闪光灯
页数	文件大小	规格书
4页	155K
描述
Strobe Flash Applications Medium Power Amplifier Applications

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数据手册

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2SA1242_10 数据手册

2SA1242

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1242

Strobe Flash Applications

Unit: mm

Medium Power Amplifier Applications

•

Excellent h

linearity

: h

= 100 to 320 (V

= −2 V, I = −0.5 A)

FE (1)

FE (2)

CE C

= 70 (min) (V

= −2 V, I = −4 A)

•

Low collector saturation voltage

: V = −1.0 V (max) (I = −4 A, I = −0.1 A)

CE (sat)

High power dissipation

: P = 10 W (Tc = 25°C), P = 1.0 W (Ta = 25°C)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−35

−20

−8

Collector-emitter voltage

Emitter-base voltage

JEDEC

JEITA

―

−5

Collector current

Base current

Pulsed

−8

(Note 1)

TOSHIBA

2-7J1A

−0.5

1.0

Weight: 0.36 g (typ.)

Ta = 25°C

Tc = 25°C

Collector power

dissipation

Junction temperature

150

°C

Storage temperature range

stg

−55 to 150

Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2010-02-05

12 3 4

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