Datasheet > 2SA1244_07

2SA1244_07

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	169K
描述
High Current Switching Applications

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2SA1244_07 数据手册

2SA1244

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1244

High Current Switching Applications

Unit: mm

•

Low collector saturation voltage: V

= −0.4 V (max) (I = −3 A)

CE (sat) C

High speed switching time: t

Complementary to 2SC3074

= 1.0 μs (typ.)

stg

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−60

−50

Collector-emitter voltage

Emitter-base voltage

Collector current

−5

Base current

−1

Ta = 25°C

Tc = 25°C

1.0

Collector power

dissipation

Junction temperature

150

°C

JEDEC

JEITA

―

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

2-7B1A

Weight: 0.36 g (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/Derating Concept and Methods) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

JEDEC

JEITA

―

TOSHIBA

2-7J1A

Weight: 0.36 g (typ.)

2006-11-09

12 3 4 5

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