Datasheet > 2SA1244_10

2SA1244_10

更新时间： 2024-11-25 07:29:35

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	167K
描述
High Current Switching Applications

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中文翻译

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数据手册

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2SA1244_10 数据手册

2SA1244

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1244

High Current Switching Applications

Unit: mm

•

Low collector saturation voltage: V

= −0.4 V (max) (I = −3 A)

CE (sat) C

High speed switching time: t

Complementary to 2SC3074

= 1.0 μs (typ.)

stg

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−60

−50

Collector-emitter voltage

Emitter-base voltage

Collector current

−5

Base current

−1

Ta = 25°C

Tc = 25°C

1.0

Collector power

dissipation

JEDEC

JEITA

―

Junction temperature

150

°C

Storage temperature range

stg

−55 to 150

TOSHIBA

2-7J1A

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 0.36 g (typ.)

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2010-02-05

12 3 4 5

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