Datasheet > 2SA1245

2SA1245

更新时间： 2024-11-28 06:16:43

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描述
Silicon Pnp Epitaxial Planar Type

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中文翻译

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数据手册

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2SA1245 数据手册

SMD Type

TransistIoCrs

Silicon Pnp Epitaxial Planar Type

2SA1245

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Symbol

Rating

-15

Unit

V^CBO

V^CEO

V^EBO

I^C

-8

-2

-30

Base Current

I^B

-15

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

P^C

150

T^j

125

Tstg

-55 to 125

Electrical Characteristics Ta = 25

Parameter

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Symbol

I^CBO

I^EBO

h^FE

Testconditons

Min

Typ

Max

-0.1

Unit

ìA

VCB=-5V;IE=0

VEB=-1V;IC=0

ìA

VCE=-5V;IC=-10mA

Output Capacitance

C^ob

0.75

0.60

V^CB=-5V;IE=0;f=1MHz

Reserve Transfer Capacitance

Transition Frequency

C^re

V^CE=-5V;IC=-10mA

GHz

|S^2le|²(1)

|S2le|²(2)

NF(1)

VCE=-5V;IC=-10mA;f=500MHz

VCE=-5V;IC=-10mA;f=1GHz

V^CE=-5V;IC=-3mA;f=500MHz

V^CE=-5V;IC=-3mA;f=1GHz

Insertion Gain

Noise Figure

9.5

2.5

3.0

NF(2)

Marking

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