2SA1242
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1242
Unit: mm
Strobe Flash Applications
Medium Power Amplifier Applications
•
Excellent h
linearity
FE
: h
: h
= 100 to 320 (V
= −2 V, I = −0.5 A)
FE (1)
FE (2)
CE C
= 70 (min) (V
= −2 V, I = −4 A)
C
CE
•
•
Low collector saturation voltage
: V = −1.0 V (max) (I = −4 A, I = −0.1 A)
CE (sat)
C
B
High power dissipation
: P = 10 W (Tc = 25°C), P = 1.0 W (Ta = 25°C)
C
C
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Symbol
Rating
Unit
V
CBO
V
CEO
V
EBO
−35
−20
−8
V
V
V
Collector-emitter voltage
Emitter-base voltage
JEDEC
JEITA
―
―
DC
I
−5
C
Collector current
Base current
A
TOSHIBA
2-7J1A
Pulsed
I
−8
CP
(Note 1)
Weight: 0.36 g (typ.)
I
−0.5
1.0
A
B
Ta = 25°C
Tc = 25°C
Collector power
dissipation
P
W
C
10
Junction temperature
T
150
°C
°C
j
Storage temperature range
T
stg
−55 to 150
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-08-27