Datasheet > 2SA1179

2SA1179

更新时间： 2024-11-14 12:20:19

品牌	Logo	应用领域
SECOS		晶体晶体管开关光电二极管
页数	文件大小	规格书
2页	185K
描述
PNP Silicon Plastic Encapsulated Transistor

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技术参数
数据手册

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2SA1179 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.48	Is Samacsys：	N
Base Number Matches：	1

2SA1179 数据手册

2SA1179

-0.15A , -55V

PNP Silicon Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-23

FEATURES

 High breakdown voltage

Top View

C B

MARKING

Product

Marking Code

2SA1179

Millimeter

Min. Max.

0.10 REF.

0.55 REF.

0.08 0.15

PACKAGE INFORMATION

REF.

Min.

Max.

3.00

2.55

1.40

1.15

2.80

2.25

1.20

0.90

Package

MPQ

LeaderSize

0.5 REF.

SOT-23

7’ inch

1.80

0.30

2.00

0.50

0.95 TYP.

Collector





Base



Emitter

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Junction and Storage Temperature

-55

-50

-5

-150

200

°C

P_C

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted)

Parameter

Collector to Base Breakdown Voltage V_(BR)CBO

Collector to Emitter Breakdown

Emitter to Base Breakdown Voltage

Collector Cut-off Current

Symbol

Min.

-55

-50

-5

Typ.

Max.

Unit

A

Test Conditions

I_C= -10A, I_E=0

I_C= -1mA, I_B=0

I_E= -10A, I_C=0

V_CB= -35V, I_E=0

V_(BR)CEO

V_(BR)EBO

I_CBO

-0.1

Emitter Cut-off Current

DC Current Gain

I_EBO

h_FE

-0.1

400

A

V_EB= -4V, I_C=0

200

V_CE= -6V, I_C= -1mA

Collector to Emitter

Saturation Voltage

V_CE(sat)

-0.5

I_C= -50mA, I_B= -5mA

Base to Emitter Saturation Voltage

V_BE(sat)

-1.0

I_C= -50mA, I_B= -5mA

Transition Frequency

Collector Output Capacitance

f_T

C_ob

180

MHz

V_CE= -6V, I_C= -10mA

V_CB= -6V, I_E=0, f=1MHz

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

28-Jan-2011 Rev. B

Page 1 of 2

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