2SA1179
-0.15A , -55V
PNP Silicon Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
High breakdown voltage
A
L
3
3
Top View
C B
1
1
2
MARKING
2
K
F
E
Product
Marking Code
D
2SA1179
M
H
J
G
Millimeter
Millimeter
Min. Max.
0.10 REF.
0.55 REF.
0.08 0.15
PACKAGE INFORMATION
REF.
REF.
Min.
Max.
3.00
2.55
1.40
1.15
A
B
C
D
2.80
2.25
1.20
0.90
G
H
J
Package
MPQ
LeaderSize
K
0.5 REF.
SOT-23
3K
7’ inch
E
F
1.80
0.30
2.00
0.50
L
0.95 TYP.
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
V
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction and Storage Temperature
-55
-50
-5
-150
200
V
mA
mW
°C
PC
TJ, TSTG
150, -55~150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Collector to Base Breakdown Voltage V(BR)CBO
Collector to Emitter Breakdown
Emitter to Base Breakdown Voltage
Collector Cut-off Current
Symbol
Min.
-55
-50
-5
Typ.
Max.
-
-
-
Unit
V
V
V
A
Test Conditions
IC= -10A, IE=0
IC= -1mA, IB=0
IE= -10A, IC=0
VCB= -35V, IE=0
-
-
-
-
V(BR)CEO
V(BR)EBO
ICBO
-
-0.1
Emitter Cut-off Current
DC Current Gain
IEBO
hFE
-
-
-
-0.1
400
A
VEB= -4V, IC=0
200
VCE= -6V, IC= -1mA
Collector to Emitter
Saturation Voltage
VCE(sat)
-
-
-0.5
V
V
IC= -50mA, IB= -5mA
Base to Emitter Saturation Voltage
VBE(sat)
-
-
-1.0
IC= -50mA, IB= -5mA
Transition Frequency
Collector Output Capacitance
fT
Cob
-
-
180
4
-
-
MHz
pF
VCE= -6V, IC= -10mA
VCB= -6V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
28-Jan-2011 Rev. B
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