2SA1013R

更新时间： 2024-11-12 12:35:43

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管 PC
页数	文件大小	规格书
5页	165K
描述
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

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2SA1013R 数据手册

2SA1013

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

2SA1013

Color TV Verttical Deflection Output Applications

Unit: mm

Power Switching Applications

•

High voltage: V

= −160 V

CEO

Large continuous collector current capability

Recommended for vertical deflection output & sound output

applications for line-operated TV.

•

Complementary to 2SC2383.

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−160

−6

Collector-emitter voltage

Emitter-base voltage

Collector current

−1

Base current

−0.5

Collector power dissipation

Junction temperature

Storage temperature range

900

°C

JEDEC

JEITA

TO-92MOD

150

―

stg

−55 to 150

TOSHIBA

2-5J1A

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 0.36 g (typ.)

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2006-11-09

12 3 4 5

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