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2SA1013-R-BP-HF PDF预览

2SA1013-R-BP-HF

更新时间: 2024-01-11 21:00:01
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
2页 285K
描述
Small Signal Bipolar Transistor,

2SA1013-R-BP-HF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.6
峰值回流温度(摄氏度):260处于峰值回流温度下的最长时间:10
Base Number Matches:1

2SA1013-R-BP-HF 数据手册

 浏览型号2SA1013-R-BP-HF的Datasheet PDF文件第2页 
M C C  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
2SA1013-R  
2SA1013-O  
2SA1013-Y  
TM  
Micro Commercial Components  
Features  
Lead Free Finish/Rohs Compliant ("P"Suffix designates  
RoHS Compliant. See ordering information)  
Capable of 0.9Watts of Power Dissipation.  
PNP  
Epitaxial Silicon  
Transistor  
Collector-current -1.0A  
Collector-base Voltage -160V  
Operating and storage junction temperature range: -55R to +150R  
Epoxy meets UL 94 V-0 flammability rating  
·
·
·
Moisture Sensitivity Level 1  
Halogen free available upon request by adding suffix "-HF"  
Electrical Characteristics @ 25 C Unless Otherwise Specified  
O
TO-92MOD  
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
K
A
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
Collector-Emitter Breakdown Voltage  
(IC=-1.0mAdc, IB=0)  
Collector-Base Breakdown Voltage  
(IC=-100uAdc, IE=0)  
Emitter-Base Breakdown Voltage  
(IE=-10mAdc, IC=0)  
Collector Cutoff Current  
(VCB=-150Vdc, IE=0)  
-160  
-160  
-6.0  
---  
---  
---  
Vdc  
Vdc  
L
J
---  
Vdc  
M
B
-1.0  
-10  
-1.0  
uAdc  
uAdc  
uAdc  
H
G
ICEO  
Collector Cutoff Current  
(VCB=-120Vdc, IE=0)  
Emitter Cutoff Current  
---  
IEBO  
---  
C
(VEB=-6.0Vdc, IC=0)  
ON CHARACTERISTICS  
F
hFE(1)  
hFE(2)  
VCE(sat)  
VBE  
DC Current Gain  
(IC=-200mAdc, VCE=-5.0Vdc)  
DC Current Gain  
(IC=-50mAdc, VCE=-5.0Vdc)  
Collector-Emitter Saturation Voltage  
(IC=-500mAdc, IB=-50mAdc)  
Base-Emitter Saturation Voltage  
(IC=-5.0mAdc, VCE=-5.0Vdc)  
65  
40  
---  
---  
310  
---  
---  
---  
-1.5  
-0.75  
Vdc  
Vdc  
E
E
E
C
C
B
B
D
STRAIGHT LEAD BENT LEAD  
BULK PACK AMMO PACK  
SMALL-SIGNAL CHARACTERISTICS  
fT  
Transistor Frequency  
(IC=-200mAdc, VCE=-5.0Vdc,  
f=30MHz)  
-15  
---  
MHz  
DIMENSIONS  
INCHES  
MIN  
.228  
.331  
.016  
MM  
DIM  
A
B
MAX  
MIN  
MAX  
NOTE  
6.20  
8.80  
0.60  
Straight Lead  
CLASSIFICATION OF HFE (1)  
.
244  
5.80  
8.40  
0.40  
2.90  
Rank  
R
O
Y
.
.
.
346  
024  
122  
Range  
60-120  
120-200  
200-300  
C
.114  
3.10  
D
Bent Lead  
.173  
.220  
4.40  
5.60  
Straight Lead  
Bent Lead  
.059  
1.50  
2.80  
E
.086  
.110  
2.20  
13.80  
0.90  
4.00  
4.70  
-----  
F
.543  
.
559  
14.20  
1.10  
G
H
J
K
L
.035  
.157  
.185  
----  
.016  
.068  
.
043  
-----  
---  
5.10  
1.60  
0.50  
2.03  
.
.
.
.
201  
063  
020  
080  
0.40  
1.73  
M
* For ammo packing detailed specification, click here to visit our website  
of product packaging for details.  
www.mccsemi.com  
1 of 2  
Revision: C  
2013/01/01  

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