Datasheet > 2SA1015

2SA1015

更新时间： 2024-11-17 07:29:27

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	38K
描述
PNP Transistor

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中文翻译

获取价格

数据手册

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2SA1015 数据手册

SMD Type

TransistIoCrs

PNP Transistor

2SA1015

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

High voltage and high current

VCEO:=-50V(min.),IC=-150mA(max.)

Low niose: NF=1dB(Typ.) at f=1KHz

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Symbol

VCBO

VCEO

VEBO

Rating

-50

Unit

-50

-5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

150

200

125

Storage Temperature

Tstg

-55 to 125

Electrical Characteristics Ta = 25

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Symbol

Testconditons

Min

-50

-5

Typ

Max

Unit

VCBO

VCEO

VEBO

ICBO

Ic= -100 A, IE=0

Ic= -0.1mA, IB=0

IE= -100 A, IC=0

VCB=-50V , IE=0

-0.1

400

-0.3

-1.1

Collector cut-off current

ICEO

VCE= -50V , IB=0

Emitter cut-off current

IEBO

VEB=- 5V , IC=0

DC current gain

hFE

VCE=-6V, IC= -2mA

IC=-100 mA, IB= -10mA

VCE=-10V, IC= -1mA,f=30MHz

130

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

VCE(sat)

VBE(sat)

MHz

hFE Classification

Marking

Rank

hFE

130 200

200 400

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