M C C
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
20736 Marilla Street Chatsworth
ꢆꢋꢅꢌꢍꢎꢍꢍ
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
2SA1013-R
2SA1013-O
2SA1013-Y
TM
Micro Commercial Components
Features
•
Lead Free Finish/Rohs Compliant ("P"Suffix designates
Compliant. See ordering information)
•
•
•
•
x
Capable of 0.9Watts of Power Dissipation.
PNP
Epitaxial Silicon
Transistor
Collector-current -1.0A
Collector-base Voltage -160V
Operating and storage junction temperature range: -55R to +150R
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL rating 1
O
Electrical Characteristics @ 25 C Unless Otherwise Specified
TO-92MOD
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage
(IC=-1.0mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=-100uAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE=-10mAdc, IC=0)
Collector Cutoff Current
(VCB=-150Vdc, IE=0)
-160
-160
-6.0
---
---
---
Vdc
Vdc
E
---
Vdc
-1.0
-10
-1.0
uAdc
uAdc
uAdc
A
B
C
D
ICEO
Collector Cutoff Current
(VCB=-120Vdc, IE=0)
Emitter Cutoff Current
---
IEBO
---
(VEB=-6.0Vdc, IC=0)
ON CHARACTERISTICS
hFE(1)
hFE(2)
VCE(sat)
VBE
DC Current Gain
(IC=-200mAdc, VCE=-5.0Vdc)
DC Current Gain
(IC=-50mAdc, VCE=-5.0Vdc)
Collector-Emitter Saturation Voltage
(IC=-500mAdc, IB=-50mAdc)
Base-Emitter Saturation Voltage
(IC=-5.0mAdc, VCE=-5.0Vdc)
65
40
---
---
310
---
---
F
G
1. EMITTER
2. COLLECTOR
3. BASE
---
123
H
-1.5
-0.75
Vdc
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Transistor Frequency
(IC=-200mAdc, VCE=-5.0Vdc,
f=30MHz)
-15
---
MHz
DIMENSIONS
MM
INCHES
DIM
A
B
C
D
E
F
G
H
I
MIN
---
---
---
---
MAX
.030
.039
.031
.024
.201
MIN
---
---
---
---
MAX
.750
1.00
.80
0.60
5.10
NOTE
CLASSIFICATION OF HFE (1)
Rank
Range
R
O
Y
60-120
120-200
200-300
---
---
.050
.050
.100
.039
1.27
1.27
2.54
1.00
J
K
L
M
N
---
---
---
---
---
.087
.024
.323
.413
.161
---
---
---
---
---
2.20
.60
8.20
10.50
4.10
www.mccsemi.com
1 of 2
Revision: 4
2008/02/01