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2SA1013-O-AP PDF预览

2SA1013-O-AP

更新时间: 2024-11-12 13:04:07
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管
页数 文件大小 规格书
2页 102K
描述
Small Signal Bipolar Transistor,

2SA1013-O-AP 技术参数

是否Rohs认证: 符合生命周期:End Of Life
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.6
JESD-609代码:e3端子面层:Matte Tin (Sn)
Base Number Matches:1

2SA1013-O-AP 数据手册

 浏览型号2SA1013-O-AP的Datasheet PDF文件第2页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
2SA1013-R  
2SA1013-O  
2SA1013-Y  
TM  
Micro Commercial Components  
Features  
Lead Free Finish/Rohs Compliant ("P"Suffix designates  
Compliant. See ordering information)  
x
Capable of 0.9Watts of Power Dissipation.  
PNP  
Epitaxial Silicon  
Transistor  
Collector-current -1.0A  
Collector-base Voltage -160V  
Operating and storage junction temperature range: -55R to +150R  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL rating 1  
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
TO-92MOD  
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
Collector-Emitter Breakdown Voltage  
(IC=-1.0mAdc, IB=0)  
Collector-Base Breakdown Voltage  
(IC=-100uAdc, IE=0)  
Emitter-Base Breakdown Voltage  
(IE=-10mAdc, IC=0)  
Collector Cutoff Current  
(VCB=-150Vdc, IE=0)  
-160  
-160  
-6.0  
---  
---  
---  
Vdc  
Vdc  
E
---  
Vdc  
-1.0  
-10  
-1.0  
uAdc  
uAdc  
uAdc  
A
B
C
D
ICEO  
Collector Cutoff Current  
(VCB=-120Vdc, IE=0)  
Emitter Cutoff Current  
---  
IEBO  
---  
(VEB=-6.0Vdc, IC=0)  
ON CHARACTERISTICS  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE  
DC Current Gain  
(IC=-200mAdc, VCE=-5.0Vdc)  
DC Current Gain  
(IC=-50mAdc, VCE=-5.0Vdc)  
Collector-Emitter Saturation Voltage  
(IC=-500mAdc, IB=-50mAdc)  
Base-Emitter Saturation Voltage  
(IC=-5.0mAdc, VCE=-5.0Vdc)  
65  
40  
---  
---  
310  
---  
---  
F
G
1. EMITTER  
2. COLLECTOR  
3. BASE  
---  
123  
H
-1.5  
-0.75  
Vdc  
Vdc  
SMALL-SIGNAL CHARACTERISTICS  
fT  
Transistor Frequency  
(IC=-200mAdc, VCE=-5.0Vdc,  
f=30MHz)  
-15  
---  
MHz  
DIMENSIONS  
MM  
INCHES  
DIM  
A
B
C
D
E
F
G
H
I
MIN  
---  
---  
---  
---  
MAX  
.030  
.039  
.031  
.024  
.201  
MIN  
---  
---  
---  
---  
MAX  
.750  
1.00  
.80  
0.60  
5.10  
NOTE  
CLASSIFICATION OF HFE (1)  
Rank  
Range  
R
O
Y
60-120  
120-200  
200-300  
---  
---  
.050  
.050  
.100  
.039  
1.27  
1.27  
2.54  
1.00  
J
K
L
M
N
---  
---  
---  
---  
---  
.087  
.024  
.323  
.413  
.161  
---  
---  
---  
---  
---  
2.20  
.60  
8.20  
10.50  
4.10  
www.mccsemi.com  
1 of 2  
Revision: 4  
2008/02/01  

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